[1] Leinert C, Bowyer S, Haikala L K et al. The 1997 reference of diffuse night sky brightness[J]. Astron. Astrophys. Suppl. Ser., 127, 1-99(1998).

[2] Cohen N, Aphek O. Extended wavelength SWIR detectors with reduced dark current[C], 9451, 30-41(2015).

[3] Tidhar G A, Segal R. New applications with a SWIR imager employing long wavelengths[C], 8012, 70-82(2011).

[4] Jovanovic N, Martinache F, Guyon O et al. The subaru coronagraphic extreme adaptive optics system: enabling high-contrast imaging on solar-system scales[J]. Publ. Astron. Soc. Pac., 127, 890-910(2015).

[5] Thimsen E, Sadtler B, Berezin M Y. Shortwave-infrared (SWIR) emitters for biological imaging: a review of challenges and opportunities[J]. Nanophotonics, 6, 1043-54(2017).

[6] Zhang J, Itzler M A, Zbinden H et al. Advances in InGaAs/InP single-photon detector systems for quantum communication[J]. Light-Sci. Appl., 4, e286(2015).

[7] Strausbaugh R, Jackson R, Butler N. Night vision for small telescopes[J]. Publ. Astron. Soc. Pac., 130, 10(2018).

[8] Fathipour V, Bonakdar A, Mohseni H. Advances on sensitive electron-injection based cameras for low-flux, short-wave infrared applications[J]. Front. Mater., 3, 33(2016).

[9] Liang Y, Perumalveeramalai C, Lin G C et al. A review on III-V compound semiconductor short wave infrared avalanche photodiodes[J]. Nanotechnology, 33, 222003(2022).

[10] Campbell J C. Evolution of low-noise avalanche photodetectors[J]. IEEE J. Sel. Top Quantum Electron., 28, 11(2022).

[11] Memis O G, Kohoutek J, Wu W et al. A short-wave infrared nanoinjection imager with 2500 A/W responsivity and low excess noise[J]. IEEE Photonics Journal, 2, 858-64(2010).

[12] Memis O G, Katsnelson A, Kong S C et al. Sub-poissonian shot noise of a high internal gain injection photon detector[J]. Opt. Express, 16, 12701-12706(2008).

[13] Dehzangi A, Mcclintock R, Wu D H et al. Extended short wavelength infrared heterojunction phototransistors based on type II superlattices[J]. Appl. Phys. Lett., 114, 5(2019).

[14] Li J K, Dehzangi A, Razeghi M. Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices[J]. Infrared Phys. Technol., 113, 6(2021).

[15] Xie Z H, Deng Z, Huang J et al. InP-based extended-short wave infrared heterojunction phototransistor[J]. Journal of Lightwave Technology, 39, 4814-9(2021).

[16] Rezaei M, Park M S, Rabinowitz C et al. InGaAs based heterojunction phototransistors: Viable solution for high-speed and low-noise short wave infrared imaging[J]. Applied Physics Letter, 114, 5(2019).

[17] Liu L, Rabinowitz J, Bianconi S et al. Highly sensitive SWIR detector array based on nanoscale phototransistors integrated on CMOS readout[J]. Applied Physics Letter, 117(2020).

[18] Rezaei M, Park M S, Tan C. L. et al. Sensitivity limit of nanoscale phototransistors[J]. IEEE Electron Device Letters, 38, 1051-4(2017).

[19] Vurgaftman I, Meyer J R, Ram-Mohan L R. Band parameters for III-V compound semiconductors and their alloys[J]. J. Appl. Phys., 89, 5815-75(2001).

[20] Chai X L. Studies of the mid-wavelength interband cascade infrared photodetector[D](2021).

[21] Movassaghi Y, Fathipour V, Fathipour M et al. Analytical modeling and numerical simulation of the short-wave infrared electron-injection detectors[J]. Applied Physics Letter, 108, 5(2016).

[22] Kawamata S, Hibino A, Tanaka S et al. Effective mass of two-dimensional electrons in InGaAsN/GaAsSb type II quantum well by Shubnikov-de Haas oscillations[J]. J. Appl. Phys., 120, 3(2016).

[23] Goto S, Ueda T, Ohshima T et al. Effect of growth conditions on electrical properties of Si-doped In0.52Al0.48As grown by metalorganic vapor phase epitaxy[J]. Japanese journal of applied physics, 38, 1048-1051(1999).

[24] Detz H, Klang P, Andrews A M et al. Si doping of MBE grown bulk GaAsSb on InP[J]. J. Cryst. Growth, 323, 42-4(2011).

[25] Higashino T, Kawamura Y, Fujimoto M et al. Properties of In0.53Ga0.47As/GaAs0.5Sb0.5 type II multiple quantum well structures grown on (111)B InP substrates by molecular beam epitaxy[J]. J. Cryst. Growth, 243, 8-12(2002).

[26] Martinez M J, Look D C, Sizelove J R et al. Monte-Carlo simulation of bulk hole transport in alxgal-xas ALXGA1-XAS, IN1-XALXAS, AND GAASXSB1-X[J]. J. Appl. Phys., 77, 661-4(1995).

[27] Easley J, Martin C R, Ettenberg M H et al. InGaAs/GaAsSb type-II superlattices for short-wavelength infrared detection[J]. Journal of Electronic Materials, 48, 6025-6029(2019).

[28] Choi S W, Furue S, Hayama N et al. Gain-enhanced InGaAs-InP heterojunction phototransistor with Zn-doped mesa sidewall[J]. IEEE Photonics Technology Letters, 21, 1187-1189(2009).

[29] Ogura M, Choi S W, Furue S et al. Effects of Zn doped Mesa sidewall on gain enhanced InGaAs/InP heterobipolar phototransistor[J]. IEEE Journal of Quantum Electronics, 46, 214-219(2010).

[30] Memis O G, Katsnelson A, Kong S C et al. A photon detector with very high gain at low bias and at room temperature[J]. Appl. Phys. Lett., 91, 3(2007).

[31] Li J, Dehzangi A, Wu D et al. Type-II superlattice-based heterojunction phototransistors for high speed applications[J]. Infrared Phys. Technol., 108, 103350(2020).

[32] Shi M, Wu G J, Geng L et al[M]. Physics of semiconductor devices (Third Edition)(2008).

[33] Rezaei M, Park M S, Tan C L et al. Heterojunction phototransistor for highly sensitive infrared detection[C], 10177, 385-390(2017).

[34] Helme J P, Houston P A. Analytical modeling of speed response of heterojunction bipolar phototransistors[J]. Journal of Lightwave Technology, 25, 1247-1255(2007).

[35] Wang Z T, Huang J, Zhu L Q et al. High-performance InP-based bias-tunable near-infrared/extended-short wave infrared dual-band photodetectors[J]. Journal of Lightwave Technology, 40, 5157-5162(2022).

[36] Liu L N, Rabinowitz J, Bianconi S et al. Highly sensitive SWIR detector array based on nanoscale phototransistors integrated on CMOS readout[J]. Appl. Phys. Lett., 117, 7(2020).