Fig. 1. Schematic diagram of proposed polarized InGaN/GaN LED integrated with all-dielectric nanostructures

Fig. 2. Far-field intensity varying with angle under different structural parameters. (a) Far-field intensity varying with angle under different thicknesses of dielectric layers, other parameters are P=550 nm,W=160 nm,H₃=120 nm, H=H₁=H₂, and 2 pairs of alternately dielectric layers; (b) far-field intensity varying with angle under different pairs of alternately dielectric layers when P=500 nm; (c) far-field intensity varying with angle under different pairs of alternately dielectric layers when P=550 nm; (d) far-field intensity varying with angle under different pairs of alternately dielectric layers when P=600 nm; (e) far-field intensity varying with angle under different pairs of alternately dielectric layers when P=650 nm; (f) comparison of optimization results in different periods, other parameters are W=160 nm,H₃=120 nm,H=H₁=H₂=80 nm, and 2 pairs of alternately dielectric layers

Fig. 3. Parameter optimization of TiO₂ dielectric nano-grating. (a) Variation of far-field intensity under different H₃; (b) variation of far-field intensity under different W

Fig. 4. Spatial distribution of electric field intensity of polarized LED with different structures. (a) spatial distribution of electric field intensity of bare LED device; (b) spatial distribution of electric field intensity of LED device covered with photonic crystal structure which composed of two pairs of dielectric transmission layers; (c) spatial distribution of electric field intensity of LED device with all-dielectric nanostructure (nano-grating/one-dimensional photonic crystal composite structure) ; (d) far-field spatial distribution of electric field intensity of all-dielectric nanostructure device in green wavelength range (500-550 nm)