Chinese Journal of Quantum Electronics, Volume. 24, Issue 4, 514(2007)
Influence of different incident medium on reflectance spectra of the GaN-based distributed Bragg reflector
[1] [1] Nakamura S,Fasol G,Pearton S. The Blue Laser Diode [M].Berlin: Springer,2000.
[2] [2] Sugawara H,Itaya K,Nozaki H,et al. High-brightness InGaAlP green light-emitting diodes [J].Appl.Phys. Lett.,1992,61(15): 1775-1777.
[3] [3] Nakada H,Nakaji M,Shikawa H,et al. Improved characteristics of InGaN multiple quantum well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire [J].Appl. Phys. Lett.,2000,76(14): 1804-1806.
[4] [4] Macleod H A. Thin-Film Optical Filters(2nd ed.)[M].NewYork: McGraw-Hill Publishing Company. 1986.164-170.
[6] [6] Peng T,Piprek J. Refractive index of AlGaInN alloys [J].Electron. Lett.,1996,32(24): 2285-2286.
[7] [7] Ng H M,Doppalapudi D,lliopoulos E,et al. Distributed Bragg reflectors based on AlN/GaN multilayers [J].Appl. Phys. Lett.,1999,74(7): 1036-1038.
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ZHENG Shu-wen, FAN Guang-han, LI Shu-ti, ZHOU Tian-ming. Influence of different incident medium on reflectance spectra of the GaN-based distributed Bragg reflector[J]. Chinese Journal of Quantum Electronics, 2007, 24(4): 514
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Received: Aug. 21, 2006
Accepted: --
Published Online: Jun. 7, 2010
The Author Email: Shu-wen ZHENG (fineday8815@163.com)
CSTR:32186.14.