Acta Optica Sinica, Volume. 43, Issue 2, 0223003(2023)

Design of Micro-LED Driving Structure Considering Small Size Effect

Luqiao Yin1,2, Xuesong Zhang1, Kailin Ren1, Nan Zhang3, Maosheng Hao3, Chunya Li2、*, and Jianhua Zhang1,2
Author Affiliations
  • 1Department of Microelectronics, Shanghai University, Shanghai 200444, China
  • 2Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072, China
  • 3Shanghai Chip Foundation Co., Ltd., Shanghai 201601, China
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    Figures & Tables(25)
    Epitaxial structure of Micro-LED device
    Simulation results of Micro-LED structure under different chip sizes. (a) 10 μm; (b) 38 μm; (c) 100 μm; (d) 300 μm
    I-V characteristic curve of Micro-LED
    Simulation results of radiation recombination rate under different sizes. (a) 10 μm; (b) 38 μm; (c) 100 μm; (d) 300 μm
    Simulation results of Micro-LED LEE based on FDTD. (a) Micro-LED laminated structure based on FDTD method; (b) simulation structure of 10 μm Micro-LED in FDTD
    Light power output by dipole source and light power received by the monitor with different Micro-LED chip sizes
    Schematic of Micro-LED lighting
    Structure of PMOS device
    PMOS simulation results. (a) Physical structure of PMOS device; (b) output characteristic curve; (c)(d) transfer characteristic curves and their local enlargements
    Circuit diagram of PMOS drived Micro-LED pixel. (a) Simulation circuit diagram of driving individual pixel (left: direct driving; right: driving by external current limiting resistor); (b) simulation circuit diagram of driving array pixels
    Bond equivalent circuit diagram
    Equivalent capacitance circuit
    Simulation circuit of driving array pixels
    Characteristic curves of Micro-LED directly driven by PMOS. (a) Transmission characteristic curves; (b) transient characteristic curves
    Switching characteristic curve of Micro-LED directly driven by PMOS
    Transmission characteristic curves of Micro-LED driven by PMOS with current limiting resistor. (a) r=100 Ω; (b) r=500 Ω;(c) r=1000 Ω; (d) r=10 kΩ
    Transient characteristic curves of Micro-LED driven by PMOS with current limiting resistor. (a) r=100 Ω; (b) r=500 Ω; (c) r=1000 Ω; (d) r=10 kΩ
    Switching characteristic curves of Micro-LED driven by PMOS with current limiting resistor. (a) r=100 Ω; (b) r=500 Ω;(c) r=1000 Ω; (d) r=10 kΩ
    Simulation results of array Micro-LED driven by PMOS. (a) Transmission characteristic curves; (b) transient characteristic curves
    Switching characteristic curve of array Micro-LED driven by PMOS
    Micro-LED display images under different driving states. (a) Display image of individual blue Micro-LED pixel driven by PMOS; (b) display image of individual green Micro-LED pixel driven by PMOS; (c) display image of individual blue Micro-LED pixel driven by PMOS with 100 Ω current limiting resistor; (d) display image of individual green Micro-LED pixel driven by PMOS with 100 Ω current limiting resistor; (e) display image of array Micro-LED pixels composed of green light and blue light driven by PMOS
    • Table 1. Radiation recombination rate and LEE under different sizes

      View table

      Table 1. Radiation recombination rate and LEE under different sizes

      LED size /μm

      Radiation

      recombination rate /(1029 cm3·s-1

      LEE /%
      104.0714.53
      385.2515.51
      1005.9121.36
      3006.3229.31
    • Table 2. Key parameter values of PMOS

      View table

      Table 2. Key parameter values of PMOS

      ParameterThreshold voltage /VChannel length /μmChannel width /μmSubstrate doping concentration /cm-3Oxide layer thickness /nmDevice length /μmDevice height /μm
      Value-0.50.184.54.202×10181.61.481.2
    • Table 3. Parameter summary of parasitic resistance and capacitance of Micro-LED driving circuit

      View table

      Table 3. Parameter summary of parasitic resistance and capacitance of Micro-LED driving circuit

      ParameterResistance of bonded indium bump r1 /Ω

      Resistance of

      electrode between

      indium bump and PMOS r2 /Ω

      Resistance value

      of electrode between indium bump and Micro-LED chip

      r3 /Ω

      Parasitic resistance

      between adjacent

      Micro-LED

      r4

      Parasitic capacitance

      between Micro-LED chip and CMOS driver c1 /F

      Value0.00421.833×10-48.827×10-61.2×10127.031×10-16
    • Table 4. Statistics results of turn-off delay time in different driving states

      View table

      Table 4. Statistics results of turn-off delay time in different driving states

      State of PMOS

      driven array

      Micro-LED

      Direct drive

      Driven by

      100 Ω

      current limiting

      resistor

      Driven by

      500 Ω

      current limiting resistor

      Driven by

      1000 Ω

      current limiting

      resistor

      Driven by

      10 kΩ

      current limiting

      resistor

      Driving array
      Turn-off delay time /ps3.503.9816.7124.863.0
      Opening delay time /ps3.503.696.866.9312.553.50
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    Luqiao Yin, Xuesong Zhang, Kailin Ren, Nan Zhang, Maosheng Hao, Chunya Li, Jianhua Zhang. Design of Micro-LED Driving Structure Considering Small Size Effect[J]. Acta Optica Sinica, 2023, 43(2): 0223003

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    Paper Information

    Category: Optical Devices

    Received: Jul. 15, 2022

    Accepted: Oct. 21, 2022

    Published Online: Feb. 7, 2023

    The Author Email: Li Chunya (lichunya2006@163.com)

    DOI:10.3788/AOS0223003

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