Fig. 1. Depth distributions of Au atom concentration in Au-doped HgCdTe materials annealed in an Hg-rich state

Fig. 2. Carrier concentration and mobility of Au-doped HgCdTe materials annealed in an Hg-rich state

Fig. 3. Dark current distribution of the 256×256 （30 μm pitch） LWIR HgCdTe detectors. (a) Intrinsic V_Hg doping; (b) Extrinsic Au-doping

Fig. 4. Dark current versus temperature for Au-doped LWIR HgCdTe detectors

Fig. 5. Dark current with Au-doped LWIR HgCdTe detectors

Fig. 6. LW 256×256 （30 μm pitch） detector. (a) FPA photo; (b) Response signal diagram ; (c) NETD histogram

Fig. 7. LW 640×512 (25 μm pitch) detector. (a) FPA photo; (b) Response signal diagram; (c) NETD histogram

Fig. 8. LW 640×512 (15 μm pitch) detector. (a) FPA photo; (b) Response signal diagram; (c) NETD histogram

Fig. 9. LW 1 024×768 (10 μm pitch) detector. (a) FPA photo; (b) Response signal diagramg; (c) NETD histogram

Fig. 10. NETD and bad pixels versus storage time of Au-doped LWIR HgCdTe 256×256 detector