Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Chinese Optics Letters, Volume. 17, Issue 2, 020010(2019)

Electronic and optical properties of an intrinsic type-I band alignment ZrS2/SnS2 van der Waals heterostructure for optoelectronic devices

Jimin Shang1, Shuai Zhang2, Yongqiang Wang1, Hongyu Wen3、*, and Zhongming Wei3
Author Affiliations
  • 1School of Physics and Electronics Engineering, Zhengzhou University of Light Industry, Zhengzhou 453002, China
  • 2College of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China
  • 3State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
    • show less
    Full TextGet PDF
    Figures&Tables (6)
    Equations (2)
    References (43)
    Cited By (12)
    Tools
    Paper Information
    Topics
    Figures & Tables(6)
    (a) Top and (b) side view of the SnS2 (ZrS2) monolayers; the primitive unit cell is represented by the dashed lines.

    Fig. 1. (a) Top and (b) side view of the SnS2 (ZrS2) monolayers; the primitive unit cell is represented by the dashed lines.

    Download full size
    View in Article
    Band structures and the projected density of states (PDOS) of the (a) SnS2 and (b) ZrS2 monolayers.

    Fig. 2. Band structures and the projected density of states (PDOS) of the (a) SnS2 and (b) ZrS2 monolayers.

    Download full size
    View in Article
    Top and side view of the AA, AB, and AC stacking of the ZrS2/SnS2 vdW heterostructure (the purple atom is Sn, the yellow atom is S, and the green atom is Zr).

    Fig. 3. Top and side view of the AA, AB, and AC stacking of the ZrS2/SnS2 vdW heterostructure (the purple atom is Sn, the yellow atom is S, and the green atom is Zr).

    Download full size
    View in Article
    (a) Projected band structure of the ZrS2/SnS2 heterobilayer. (b) The band alignments of the isolated ZrS2 and SnS2 monolayers and the heterostructure.

    Fig. 4. (a) Projected band structure of the ZrS2/SnS2 heterobilayer. (b) The band alignments of the isolated ZrS2 and SnS2 monolayers and the heterostructure.

    Download full size
    View in Article
    Optical absorption coefficient of the isolated monolayers and the heterostructure.

    Fig. 5. Optical absorption coefficient of the isolated monolayers and the heterostructure.

    Download full size
    View in Article
    (a) and (b) are the projected band structures under the electric field 0.4 V/Å and −0.4 V/Å, respectively. (c) and (d) are the relevant partial charge densities of the CBM and VBM.

    Fig. 6. (a) and (b) are the projected band structures under the electric field 0.4 V/Å and −0.4  V/Å, respectively. (c) and (d) are the relevant partial charge densities of the CBM and VBM.

    Download full size
    View in Article
    Tools

    Get Citation

    Copy Citation Text

    Jimin Shang, Shuai Zhang, Yongqiang Wang, Hongyu Wen, Zhongming Wei. Electronic and optical properties of an intrinsic type-I band alignment ZrS2/SnS2 van der Waals heterostructure for optoelectronic devices[J]. Chinese Optics Letters, 2019, 17(2): 020010

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Special Issue: EXTRAORDINARY 2D MATERIALS BASED NANOPHOTONICS

    Received: Nov. 27, 2018

    Accepted: Dec. 20, 2018

    Published Online: Feb. 14, 2019

    The Author Email: Hongyu Wen (wenhongyu@semi.ac.cn)

    DOI:10.3788/COL201917.020010

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology