The purpose of this paper is to study the removal process of poly silicon surround coating on the front edge of wafer. And, this layer is formed when poly-si passivation layer of TOPCon (tunnel oxide activated contact) solar cell is deposited on the back. The research solved the problem of bad appearance and poor light absorption of solar cell. In this paper, HF-HNO3 solution and KOH solution were used to corrosion this layer, and then the removal effect was evaluated by monitoring the process control points and EL test after corrosion. When HF 1wt% and HNO3 50wt%, the surround coating can be removed after corrosion for more than 4 min, but the square resistance(R□)and boron doping concentration on the front of silicon wafer change greatly after more than 6 min. When KOH 0.1wt% and additive 5vol%， 60 ℃, the coating can be removed after corrosion for more than 2.5 min, and the change of R□.etc is not obvions. Therefore, the former has higher requirements for the preparation of electrode, otherwise it is easy to cause poor ohmic contact of the solar cell. And for the latter, electrode preparation process of solar cell is easier to control. So, it is the better selection to removal the polysilicon surround coating for industrial production by KOH etching.