International Journal of Extreme Manufacturing, Volume. 2, Issue 4, 45104(2020)

Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

Zige Tian1...2, Xun Chen2 and Xipeng Xu1 |Show fewer author(s)
Author Affiliations
  • 1Institute of Manufacturing Engineering, Huaqiao University, Xiamen, Fujian Province, People’s Republic of China
  • 2Faculty of Engineering and Technology, Liverpool John Moores University, Liverpool, United Kingdom
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    Zige Tian, Xun Chen, Xipeng Xu. Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates[J]. International Journal of Extreme Manufacturing, 2020, 2(4): 45104

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    Paper Information

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    Received: May. 28, 2020

    Accepted: --

    Published Online: Apr. 16, 2021

    The Author Email:

    DOI:10.1088/2631-7990/abc26c

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