Fig. 1. Cross-sectionals view of HgCdTe p-on-n device

Fig. 2. SIMS As concentration profiles before (black line) and after (red line) Hg anealing

Fig. 3. I-V curve characteristics of HgCdTe p-on-n device

Fig. 4. Infrared spectrum curve of p-on-n HgCdTe device

Fig. 5. Signal response diagram of p-on-n MWIR HgCdTe focal plane device

Fig. 6. NETD histogram of MWIR p-on-n HgCdTe focal plane device

Fig. 7. NETD of p-on-n MWIR HgCdTe focal plane device from 80 K to 200 K

Fig. 8. Blind element distribution of MWIR HgCdTe p-on-n focal plane device from 80 K to 180 K

Fig. 9. Array operability of MWIR HgCdTe p-on-n focal plane device from 80 K to 200 K

Fig. 10. Dark current of the device operating within 150-200 K (a) and the comparison of dark current operating under 150 K and photocurrent of blackbody at different temperatures (b)

Fig. 11. Dark current and photocurrent for 300 K blackbody of the device operating within 150-200 K