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Photonics Research, Volume. 5, Issue 2, A30(2017)

InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter

Anna Kafar1、*, Szymon Stanczyk1, Marcin Sarzynski1, Szymon Grzanka1,2, Jakub Goss1, Irina Makarowa2, Anna Nowakowska-Siwinska2, Tadek Suski1, and Piotr Perlin1,2
Author Affiliations
  • 1Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
  • 2TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland
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    [1] C. F. Lin, B. L. Lee. Extremely broadband AlGaAs/GaAs superluminescent diodes. Appl. Phys. Lett., 71, 1598-1600(1997).

    [2] Z. Z. Sun, D. Ding, Q. Gong, W. Zhou, B. Xu, Z. G. Wang. Quantum-dot superluminescent diode: a proposal for an ultra-wide output spectrum. Opt. Quantum Electron., 31, 1235-1246(1999).

    [3] Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, F. Q. Liu. High-performance quantum-dot superluminescent diodes. IEEE Photon. Technol. Lett., 16, 27-29(2004).

    [4] L. H. Li, M. Rossetti, A. Fiore, L. Occhi, C. Velez. Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers. Electron. Lett., 41, 41-43(2005).

    [5] M. Z. M. Khan, M. A. Majid, T. K. Ng, D. Cha, B. S. Ooi. Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth >700  nm. Opt. Lett., 38, 3720-3723(2013).

    [6] S. Chen, W. Li, Z. Zhang, D. Childs, K. Zhou, J. Orchard, K. Kennedy, M. Hugues, E. Clarke, I. Ross, O. Wada, R. Hogg. GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures. Nanoscale Res. Lett., 10, 340(2015).

    [7] E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, C. Velez. Broadband blue superluminescent light-emitting diodes based on GaN. Appl. Phys. Lett., 95, 081107(2009).

    [8] M. T. Hardy, K. M. Kelchner, Y. D. Lin, P. S. Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, S. P. DenBaars. m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching. Appl. Phys. Express, 2, 121004(2009).

    [9] K. Holc, L. Marona, R. Czernecki, M. Bockowski, T. Suski, S. Najda, P. Perlin. Temperature dependence of superluminescence in InGaN-based superluminescent light emitting diode structures. J. Appl. Phys., 108, 013110(2010).

    [10] F. Kopp, C. Eichler, A. Lell, S. Tautz, J. Ristic, B. Stojetz, C. Hoss, T. Weig, U. T. Schwarz, U. Strauss. Blue superluminescent light-emitting diodes with output power above 100  mW for picoprojection. Jpn. J. Appl. Phys., 52, 08JH07(2013).

    [11] A. Kafar, S. Stanczyk, G. Targowski, T. Oto, I. Makarowa, P. Wisniewski, T. Suski, P. Perlin. High-optical-power InGaN superluminescent diodes with “j-shape” waveguide. Appl. Phys. Express, 6, 092102(2013).

    [12] C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, B. S. Ooi. High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications. Opt. Lett., 41, 2608-2611(2016).

    [13] A. Castiglia, M. Rossetti, N. Matuschek, R. Rezzonico, M. Duelk, C. Vélez, J.-F. Carlinb, N. Grandjean. GaN-based superluminescent diodes with long lifetime. Proc. SPIE, 9748, 97481V(2016).

    [14] A. Kafar, S. Stanczyk, M. Sarzynski, S. Grzanka, J. Goss, G. Targowski, A. Nowakowska-Siwinska, T. Suski, P. Perlin. Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate. Opt. Express, 24, 9673-9682(2016).

    [15] M. Sarzynski, T. Suski, G. Staszczak, A. Khachapuridze, J. Z. Domagala, R. Czernecki, J. Plesiewicz, J. Pawlowska, S. P. Najda, M. Bockowski, P. Perlin, M. Leszczynski. Lateral control of indium content and wavelength of III-nitride diode lasers by means of GaN substrate patterning. Appl. Phys. Express, 5, 021001(2012).

    [16] S. Staczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyski, T. Suski, R. Kucharski, P. Perlin. Graded-index separate confinement heterostructure InGaN laser diodes. Appl. Phys. Lett., 103, 261107(2013).

    [17] P. A. Drozdz, M. Sarzynski, R. Czernecki, S. Grzanka, E. Grzanka, J. Z. Domagala, Ł. Marona, K. P. Korona, T. Suski. Monolithic cyan—violet InGaN/GaN LED array. Phys. Status Solidi A.

    [18] A. Kafar, S. Stanczyk, P. Wisniewski, T. Oto, I. Makarowa, G. Targowski, T. Suski, P. Perlin. Design and optimization of InGaN superluminescent diodes. Phys. Status Solidi A, 212, 997-1004(2015).

    CLP Journals

    [1] A. Kafar, A. Sakaki, R. Ishii, S. Stanczyk, K. Gibasiewicz, Y. Matsuda, D. Schiavon, S. Grzanka, T. Suski, P. Perlin, M. Funato, Y. Kawakami. Influence of substrate misorientation on the emission and waveguiding properties of a blue (In,Al,Ga)N laser-like structure studied by synchrotron radiation microbeam X-ray diffraction[J]. Photonics Research, 2021, 9(3): 299

    [2] Anna Kafar, Szymon Stanczyk, Marcin Sarzynski, Szymon Grzanka, Jakub Goss, Irina Makarowa, Anna Nowakowska-Siwinska, Tadek Suski, Piotr Perlin. InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter: publisher’s note[J]. Photonics Research, 2018, 6(6): 652

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    Anna Kafar, Szymon Stanczyk, Marcin Sarzynski, Szymon Grzanka, Jakub Goss, Irina Makarowa, Anna Nowakowska-Siwinska, Tadek Suski, Piotr Perlin. InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter[J]. Photonics Research, 2017, 5(2): A30

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    Paper Information

    Special Issue: RECENT DEVELOPMENTS IN LIGHT-EMITTING DIODE TECHNOLOGY AND APPLICATIONS

    Received: Nov. 10, 2016

    Accepted: Feb. 2, 2017

    Published Online: Sep. 26, 2018

    The Author Email: Anna Kafar (ak@unipress.waw.pl)

    DOI:10.1364/PRJ.5.000A30

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology