Opto-Electronic Science, Volume. 3, Issue 4, 230029(2024)

Unraveling the efficiency losses and improving methods in quantum dot-based infrared up-conversion photodetectors

Jiao Jiao Liu... Xinxin Yang, Qiulei Xu, Ruiguang Chang, Zhenghui Wu* and Huaibin Shen** |Show fewer author(s)
Author Affiliations
  • Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng 475004, China
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    Figures & Tables(4)
    (a) Schematic picture showing the device structure of quantum dot-based up-conversion photodetector. (b) The PL spectrum of ZnCdSe QDs and spectral absorbance of PbS QDs, the inset shows the TEM image of PbS QDs. (c) The J-V-L characteristics of the up-conversion photodetector in dark and under 18 mW/cm2 980 nm illumination. (d) ηpp of the up-conversion photodetector with its definition and physical interpretation shown in the inset. (e) The spectral IPCE of the up-conversion device under different applied bias. (f) The EQE of the up-conversion device; the inset shows the EL spectrum of the up-conversion device with 6 V applied bias and infrared illumination.
    (a) The J-V-L characteristics and (b) EQE of ZnCdSe-based QLEDs with TFB or PTAA as hole transport layer. (c) The J-V-L characteristics of the up-conversion device with TFB replaced by PTAA as interconnection layer. (d) The J-V characteristics of the PbS-based PDs in dark or under 18 mW/cm2 980 nm illumination. (e) The photocurrent vs. effective bias characteristics of PbS-based PD and up-conversion devices with TFB or PTAA as interconnection layers, solid line represents the fitted photocurrent with Hetch formula. (f) The effective biases across the PD unit and QLED unit in the up-conversion device with TFB or PTAA as interconnection layers.
    (a) Equivalent circuit explaining the voltage allocations in up-conversion devices. (b) The quantum efficiencies of independent PD and QLED under working conditions simulating those of the PD unit and QLED unit in up-conversion devices. (c−d) The comparisons between the products of effective IPCE × EQEi and the measured ηpp of up-conversion device with TFB and PTAA as interconnection layers, the green curves show the gaps between IPCE × EQEi product and ηpp, representing the integration losses.
    (a) EQE characteristics of the QLED based on large CdSe-based quantum dots. (b) J-V-L characteristics and (c) IPCE or EQEi characteristics of the up-conversion devices integrating the QLED with less efficiency roll-offs. (d) The ηpp of (green) up-conversion devices with optimized PbS layers and improved matching between PD unit and QLED unit, (pale red) up-conversion devices before optimization.
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    Jiao Jiao Liu, Xinxin Yang, Qiulei Xu, Ruiguang Chang, Zhenghui Wu, Huaibin Shen. Unraveling the efficiency losses and improving methods in quantum dot-based infrared up-conversion photodetectors[J]. Opto-Electronic Science, 2024, 3(4): 230029

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    Paper Information

    Category: Research Articles

    Received: Aug. 25, 2023

    Accepted: Dec. 18, 2023

    Published Online: Jul. 18, 2024

    The Author Email: Wu Zhenghui (ZHWu), Shen Huaibin (HBShen)

    DOI:10.29026/oes.2024.230029

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