[1] [1] Herschel W. Experiments on the Refrangibility of the Invisible Rays of the Sun[J]. Philosophical Magazine, 1963, 8(29): 9-15.

[2] [2] Lawson W D, Nielsen S, Putley E H, et al. Preparation and Properties of HgTe and Mixed Crystals of HgTe-CdTe[J]. Journal of Physics and Chemistry of Solids, 1959, 9(3): 325-329.

[3] [3] Dautet H, Deschamps P, Dion B, et al. Photon Counting Techniques with Silicon Avalanche Photodiodes[J]. Applied Optics, 1993, 32(21): 3894-3900.

[4] [4] Leveque G, Nasser M, Bertho, et al. Ionization Energies in CdxHg1-xTe Avalanche Photodiodes[J]. Semiconductor Science and Technology, 1993, 8(7): 1317.

[5] [5] Timothy J T. (Hg, Cd)Te Photodiodes for Detection of Two-Micrometer Infrared Radiation[J]. Optical Engineering, 1977, 16(3): 163237.

[6] [6] Bratt P R, Johnson S M, Rhiger D R, et al. Historical Perspectives on HgCdTe Material and Device Development at Raytheon Vision Systems[C]. SPIE, 2009, 7298: 72982U.

[7] [7] Storeb A K, Brudevoll T, Selvig E, et al. Effect of the Series Resistance on the Current Response of a HgCdTe Avalanche Photodiode Under High-intensity Nanosecond Irradiation[J]. Journal of Electronic Materials, 2022, 51(7): 4029-4039.

[8] [8] Reddy M, Peterson J M, Vang T, et al. Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates[J]. Journal of Electronic Materials, 2011, 40(8): 1706-1716.

[9] [9] Jones C L, Hipwood L G, Shaw C J, et al. High Performance MW and LW IRFPAs Made from HgCdTe Grown by MOVPE[C]. SPIE, 2006, 6206: 620610.

[10] [10] Kopytko M, Sobieski J, Xie R, et al. Impact Ionization in HgCdTe Avalanche Photodiode Optimized to 8 m Cut-off Wavelength at 230 K[J]. Infrared Physics & Technology, 2021, 115: 103704.

[11] [11] Gawron W, Sobieski J, Manyk T, et al. MOCVD Grown HgCdTe Heterostructures for Medium Wave Infrared Detectors[J]. Coatings, 2021, 11(5): 611.

[12] [12] Kopytko M, Murawski K, Madejczyk P, et al. Mid-Infrared HgCdTe Heterostructure and Its Potential Application to APD Operation[J]. IEEE Electron Device Letters, 2022, 43(5): 761-764.

[13] [13] Terence J D L, Baumgratz B, Chapman G R, et al. Epitaxial Growth of HgCdTe 1.55 m Avalanche Photodiodes by Molecular Beam Epitaxy[C]. SPIE, 1999, 3629: 1-5.

[14] [14] Kopytko M, Sobieski J, Gawron W, et al. Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 m[J]. Sensors, 2022, 22(3): 14248220.

[15] [15] Manyk T, Majkowycz K, Rutkowski J, et al. Theoretical Study of Back-to-back Avalanche Photodiodes for Dual-band Infrared Applications[J]. Opto-Electronics Review, 2023, 31(2): 145093.

[16] [16] Sieck A, Benecke M, Eich D, et al. Short-Wave Infrared HgCdTe Electron Avalanche Photodiodes for Gated Viewing[J]. Journal of Electronic Materials, 2018, 47(10): 5705-5714.

[17] [17] Perrais G, Gravrand O, Baylet J, et al. Gain and Dark Current Characteristics of Planar HgCdTe Avalanche Photo Diodes[J]. Journal of Electronic Materials, 2007, 36(8): 963-970.

[18] [18] Rothman J, Perrais G, Ballet P, et al. Latest Developments of HgCdTe e-APDs at CEA LETI-Minatec[J]. Journal of Electronic Materials, 2008, 37(9): 1303-1310.

[19] [19] Derelle S, Bernhardt S, Haidar R, et al. Experimental Performance and Monte Carlo Modeling of Long Wavelength Infrared Mercury Cadmium Telluride Avalanche Photodiodes[J]. Journal of Electronic Materials, 2009, 38(8): 1628-1636.

[20] [20] Gravrand O, Rothman J, Cervera C, et al. HgCdTe Detectors for Space and Science Imaging: General Issues and Latest Achievements[J]. Journal of Electronic Materials, 2016, 45(9): 4532-4541.

[21] [21] Rothman J, Borniol E D, Gravrand O, et al. MCT APD Focal Plane Arrays for Astronomy at CEA-LETI[C]. SPIE, 2016, 9915: 99150B.

[22] [22] Borniol E D, Guellec F, Rothman J, et al. HgCdTe-based APD Focal Plane Array for 2D and 3D Active Imaging: First Results on a 320×256 with 30 m Pitch Demonstrator[C]. SPIE, 2010, 7660: 76603D.

[23] [23] Rothman J, Pes S, Bleuet P, et al. Meso-photonic Detection with HgCdTe APDs at High Count Rates[J]. Journal of Electronic Materials, 2020, 49(11): 6881-6892.

[24] [24] Guo H, Cheng Y, Chen L, et al. The Performance of Mid-wave Infrared HgCdTe E-avalanche Photodiodes at SITP[C]. SPIE, 2019, 11170: 111702M.

[25] [25] Yang L, Guo H, Shen C, et al. Modeling and Characteristics of MWIR HgCdTe APD at Different Post-annealing Processes[J]. Infrared Physics & Technology, 2022, 127: 104413.

[26] [26] Li X, Chen J, He J, et al. Collapse Breakdown in Mid-Wavelength Infrared HgCdTe Avalanche Photodetector[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2022, 28(6): 1-7.

[30] [30] Beck J D, Wan C F, Kinch M A, et al. MWIR HgCdTe Avalanche Photodiodes[C]. SPIE, 2001, 4454: 46-51.

[31] [31] Beck J, Wan C, Kinch M, et al. The HgCdTe Electron Avalanche Photodiode[J]. Journal of Electronic Materials, 2006, 35(6): 1166-1173.

[32] [32] Atkinson D, Hall D, Jacobson S, et al. Photon-counting Properties of SAPHIRA APD Arrays[J]. The Astronomical Journal, 2018, 155(5): 220.

[33] [33] Anderson P D, Beck J D, Sullivan W, et al. Recent Advancements in HgCdTe APDs for Space Applications[J]. Journal of Electronic Materials, 2022, 51(12): 6803-6814.