Fig. 1. Variations of (a) I_B and (b) I_C with base-emitter for the LPNP bipolar transistors with/without cap under dose rate of 100 rad(Si)/s with a ⁶⁰Co gamma irradiation source. 剂量率100 rad(Si)/s条件下γ辐射吸收剂量对开帽/未开帽处理的LPNP双极型晶体管的 (a) I_B 和 (b) I_C 随V_EB变化曲线的影响

Fig. 2. Variations of ΔI_B with V_EB for the LPNP transistors with/without cap irradiated by ⁶⁰Co gamma source. ⁶⁰Co γ射线辐照条件下开帽/未开帽处理的LPNP双极晶体管基极电流变化量与发射结电压的关系

Fig. 3. DLTS spectra of the LPNP transistors packaged with/without cap irradiated by ⁶⁰Co gamma source. ⁶⁰Co γ射线辐照条件下, 有/无进行开帽处理的LPNP双极晶体管深能级瞬态谱图

Fig. 4. (a)The relationship between total dose and current gain for LPNP bipolar transistors with/without cap under dose rate of 100 rad (Si)/s with a ⁶⁰Co gamma irradiation source. (b) The relationship between total dose and the reciprocal of current gain for LPNP bipolar transistors with/without cap under dose rate of 100 rad (Si)/s with a ⁶⁰Co gamma irradiation source. 剂量率100 rad/s条件下γ辐射吸收剂量对开帽/未开帽处理的LPNP双极晶体管(a)电流增益变化量的影响和(b)电流增益倒数变化量的影响