Acta Photonica Sinica, Volume. 31, Issue 9, 1086(2002)

ANALYSIS OF SEMI-INSULATING GaAs PHOTOCONDUCTIVE SWITCH ULTRA-LINEAR TIME RESPONSE

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    References(9)

    [1] [1] Siders C W,Siders J L W,Taylor A J,et al.Generation and characterization of tearhertz pulse trains from biased large-aperture photoconductors. Optics Letters, 1999, 24(4): 241~243

    [4] [4] Shi wei,Zhao wei.Trantsit Properties of High Power Ultra-Fast Photoconductive Semiconductor Switches.Chinese Journal of Seniconductors, 2000, 21(5): 421~426

    [5] [5] Lacassie F.Two photon absoption in semi-insulating gallium arsenide photoconductive switch irradiated by a picosecond infared laser. Eur Phys,1999,AP(11):189~195

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    [9] [9] Grado-caffaro M A. A model for optical absorption of amorphous GaAs in the far-infrared range by using an operation technique. Modern Physics Letters(B),1999,13(25): 919~923

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    [in Chinese], [in Chinese], [in Chinese]. ANALYSIS OF SEMI-INSULATING GaAs PHOTOCONDUCTIVE SWITCH ULTRA-LINEAR TIME RESPONSE[J]. Acta Photonica Sinica, 2002, 31(9): 1086

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    Paper Information

    Category: Optoelectronics

    Received: Jan. 11, 2002

    Accepted: --

    Published Online: Sep. 18, 2007

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