Chinese Journal of Quantum Electronics, Volume. 17, Issue 4, 365(2000)

The Characteric of Surface Roughness of Si3N4 Thin Film

[in Chinese]
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    References(4)

    [1] [1] Nobuo Fujiwara, Takahiro Maruyama, Satoshi Ogino et al. Etching characteristics of WSi2 with pulsed-electron cyclotron resonance plasma. Jpn. J. Appl. Phys., 1997, 36(4B): 2502~2507

    [2] [2] Barshilia H C, Vanker V D. Concentration of atomic hydrogen in the ground state in a CH4-H2microwave plasma. J. Appl. Phys., 1996, 80:3694

    [6] [6] Michikazu Morimato, Yoko Ueda, Shinya Hiejima et al. Parameters measurement of ECR silane plasma. Jpn. J. Phys., 1997, 36(7B): 4659~4663

    [7] [7] Jes Asmussen. Electron cyclotron resonance microwave discharge for etching and thin film deposition. J. Vac. Sci. Technol., 1989, 7A(3): 883~893

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    [in Chinese]. The Characteric of Surface Roughness of Si3N4 Thin Film[J]. Chinese Journal of Quantum Electronics, 2000, 17(4): 365

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    Paper Information

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    Received: Nov. 24, 1999

    Accepted: --

    Published Online: May. 15, 2006

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