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Photonics Research, Volume. 11, Issue 10, 1606(2023)

Ge0.92Sn0.08/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on a 12-inch Si substrate

Shaoteng Wu1,2,5、*, Lin Zhang1, Rongqiao Wan1,6、*, Hao Zhou1, Kwang Hong Lee1, Qimiao Chen1,7、*, Yi-Chiau Huang3, Xiao Gong4, and Chuan Seng Tan1
Author Affiliations
  • 1School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
  • 2State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 3Applied Materials, Inc., Sunnyvale, California 95054, USA
  • 4Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
  • 5e-mail: shaoteng.wu@ntu.edu.sg
  • 6e-mail: rongqiao.wan@ntu.edu.sg
  • 7e-mail: chenqm@ntu.edu.sg
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    Article index updated: Jun. 12, 2024

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    Shaoteng Wu, Lin Zhang, Rongqiao Wan, Hao Zhou, Kwang Hong Lee, Qimiao Chen, Yi-Chiau Huang, Xiao Gong, Chuan Seng Tan, "Ge0.92Sn0.08/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on a 12-inch Si substrate," Photonics Res. 11, 1606 (2023)

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    Paper Information

    Category: Silicon Photonics

    Received: Mar. 29, 2023

    Accepted: Jul. 17, 2023

    Published Online: Sep. 8, 2023

    The Author Email: Shaoteng Wu (shaoteng.wu@ntu.edu.sg), Rongqiao Wan (rongqiao.wan@ntu.edu.sg), Qimiao Chen (chenqm@ntu.edu.sg)

    DOI:10.1364/PRJ.491763

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology