Researching | Preface to Special Topic on Twisted van der Waals Heterostructures

Journal of Semiconductors, Volume. 44, Issue 1, 010101(2023)

Preface to Special Topic on Twisted van der Waals Heterostructures

Jun Zhang^1,2、* and Zhongming Wei^1,2、**

Author Affiliations

¹State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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[1] X Y Huang, X Han, Y Y Dai et al. Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices. J Semicond, 44, 011901(2023).

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[3] Y C Gao, Y Ye. Interaction of moiré excitons with cavity photons in two-dimensional semiconductor hetero-bilayers. J Semicond, 44, 011903(2023).

[4] H Li, J Y Ling, J M Lin et al. Interface engineering in two-dimensional heterostructures towards novel emitters. J Semicond, 44, 011001(2023).

[5] X H Zhang, B Peng. The twisted two-dimensional ferroelectrics. J Semicond, 44, 011002(2023).

[6] S W Zhao, G L Shao, Z V Han et al. Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40-degree-twisted bilayer WS2. J Semicond, 44, 012001(2023).

[7] X Lu. Single photon emitters originating from donor–acceptor pairs. J Semicond, 44, 010401(2023).

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[9] M Y Chen, F Q Chen, B Cheng et al. Moiré heterostructures: highly tunable platforms for quantum simulation and future computing. J Semicond, 44, 010301(2023).

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Jun Zhang, Zhongming Wei. Preface to Special Topic on Twisted van der Waals Heterostructures[J]. Journal of Semiconductors, 2023, 44(1): 010101

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Paper Information

Category: Articles

Received: Dec. 31, 2022

Accepted: --

Published Online: Feb. 22, 2023

The Author Email: Zhang Jun (zhangjwill@semi.ac.cn), Wei Zhongming (zmwei@semi.ac.cn)

DOI:10.1088/1674-4926/44/1/010101

Topics

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