Fig. 1. (Color online) (a) Schematic side view of the spin-LED structure with an InAs quantum dot active layer. The spin injector consists of MgO (2.5 nm)/CoFeB (1.2 nm)/Ta (3 nm)/Cr (3 nm). (b) HR-STEM image showing the cross-section of the spin injector. Scale bar, 5 nm. (c) Anomalous hall effect resistance (R_AHE) of the spin injector as a function of pulsed current injected in the injector channel with zero in-plane field for switching at 300 K. (d) Room temperature MOKE images of the injector Hall bar channel after applying one single pulse of −55 mA (t_puls = 1 ms) with in-plane field H_x = −15 mT. (e) R_AHE of a W-based spin injector as a function of I_pulse with different t_pulse under small in-plane field H_x = −10 mT. (f) Comparison of P_c and R_AHE loops as a function of I_pulse. (g) Polarization-resolved electroluminescence characterization, switching with H_x = +10 mT and ±30 mA. (h) Polarization-resolved electroluminescence characterization, switching with H_x = 0 T and ±30 mA. (i) Repetition measurement of P_c at 300 K and H_z = 0 with 30 cycles of magnetization switching. In each cycle, the magnetization is switched by two I_pulse for positive and negative 25 mA with H_x = +10 mT. Copyright 2024, Springer Nature^[8].