Researching | Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers

Journal of Semiconductors, Volume. 44, Issue 5, 052802(2023)

Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers

Siyi Huang^1,2,3, Masao Ikeda^2,3、*, Minglong Zhang^1,2,3, Jianjun Zhu^2,3, and Jianping Liu^1,2,3、**

Author Affiliations

¹School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

²Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

³Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, China

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References(23)

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[8] A Q Tian, J P Liu, M Ikeda et al. Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity. Appl Phys Express, 8, 051001(2015).

[9] J Yang, D G Zhao, D S Jiang et al. Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films. Chin Phys B, 25, 027102(2016).

[10] T Narita, K Tomita, Y Tokuda et al. The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE. J Appl Phys, 124, 215701(2018).

[11] J K Kim, J L Lee, J W Lee et al. Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment. Appl Phys Lett, 73, 2953(1998).

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[13] Z C Li, R Huang, X Chen et al. The significant effect of carbon and oxygen contaminants at Pd/p-GaN interface on its ohmic contact characteristics. Phys Status Solidi A, 218, 2000603(2021).

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[16] M Ikeda, S Uchida. Blue-violet laser diodes suitable for blu-ray disk. Phys Stat Sol (a), 194, 407(2002).

[17] T Kumabe, Y Ando, H Watanabe et al. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching. Jpn J Appl Phys, 60, SBBD03(2021).

[18] D G Kent, K P Lee, A P Zhang et al. Effect of N2 plasma treatments on dry etch damage in n- and p-type GaN. Solid State Electron, 45, 467(2001).

[19] W Walukiewicz, S X Li, J Wu et al. Optical properties and electronic structure of InN and In-rich group III-nitride alloys. J Cryst Growth, 269, 119(2004).

[20] F Bernardini, V Fiorentini. Spontaneous versus piezoelectric polarization in III-V nitrides: Conceptual aspects and practical consequences. Phys Stat Sol (b), 216, 391(1999).

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[23] M L Zhang, M Ikeda, S Y Huang et al. Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p+-GaN contacting layers. J Semicond, 43, 092803(2022).

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Siyi Huang, Masao Ikeda, Minglong Zhang, Jianjun Zhu, Jianping Liu. Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers[J]. Journal of Semiconductors, 2023, 44(5): 052802

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Paper Information

Category: Articles

Received: Oct. 28, 2022

Accepted: --

Published Online: Jun. 15, 2023

The Author Email: Ikeda Masao (mikeda2013@sinano.ac.cn), Liu Jianping (jpliu2010@sinano.ac.cn)

DOI:10.1088/1674-4926/44/5/052802

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