Photonics Research, Volume. 8, Issue 6, 1049(2020)
Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height
[4] S. G. Grötsch, M. Brink, R. Fiederling, T. Liebetrau, I. Möllers, J. Moisel, A. Pfeuffer. “,” SAE Technical Paper 2016-01-1410 ()(2016).
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Jae Hyeok Lee, Abu Bashar Mohammad Hamidul Islam, Tae Kyoung Kim, Yu-Jung Cha, Joon Seop Kwak. Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height[J]. Photonics Research, 2020, 8(6): 1049
Category: Optical and Photonic Materials
Received: Dec. 11, 2019
Accepted: Apr. 16, 2020
Published Online: Jun. 1, 2020
The Author Email: Joon Seop Kwak (jskwak@sunchon.ac.kr)