With Q-switched frequency-doubled laser at the wavelength of 532 nm as light source, the experiment of high speed laser scribing on amorphous silicon solar cell panels is conducted. By atomic force microscope, the scribing kerf depth, heat-affected zone dimension, kerf angle, and line energy density are measured, and the influence of scribing result on the solar cell efficiency is analyzed. The results show that the scribing result is ideal at the scribing speed of 0.3 m/s.