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Chinese Journal of Quantum Electronics, Volume. 21, Issue 3, 366(2004)

Relationship between structure characteristic and blue luminescence in unintentional doped GaN layers

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Relationship between structure characteristic and blue luminescence in unintentional doped GaN layers[J]. Chinese Journal of Quantum Electronics, 2004, 21(3): 366

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    Paper Information

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    Received: May. 6, 2003

    Accepted: --

    Published Online: May. 15, 2006

    The Author Email: ( lishuti@scnu.edu.c)

    DOI:

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology