Acta Photonica Sinica, Volume. 51, Issue 2, 0251210(2022)
Research on Si-induced Quantum Well Intermixing Based on Cyclic Annealing(Invited)
Catastrophic Optical Mirror Degradation(COMD) is one of the main factors that restrict the output power and reliability of semiconductor lasers. To achieve high power and high reliability and avoid COMD at the same time, Non-absorbing Window (NAW) is often applied to semiconductor laser preparation process, which contains secondary epitaxial growth technology and Quantum Well Intermixing (QWI). For the high cost and high difficulty of secondary epitaxial growth technology, QWI is more widely used. The common methods of QWI include Rapid Thermal Annealing (RTA), Ion Implantation Induced Disordering (IIID), Laser Induced Disordering(LID), Plasma Enhancement Induced Disordering (PID), Impurity Free Vacancy Disordering (IFVD) ,Impurities Induced Disordering (IID), etc. RTA is easy to achieve, which only needs high temperature annealing, but the repeatability and reliability is low. On the contrary, IIID, LID and PID do well in repeatability and reliability, expensive equipment is needed, however. Besides, IFVD is often conducted in relatively higher temperature. Compared to such methods above, IID technology causes impurity atoms such as Si and Zn diffuse from surface of epitaxial layer into active layer with lower temperature and high repeatability, leading to inter-diffusion of group Ⅲ atoms between quantum well and barrier, which widen the band gap of quantum well.The mechanism of Si-induced QWI has been controversial, and the Si
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Yuxiao WANG, Lingni ZHU, Li ZHONG, Qiong QI, Wei LI, Suping LIU, Xiaoyu MA. Research on Si-induced Quantum Well Intermixing Based on Cyclic Annealing(Invited)[J]. Acta Photonica Sinica, 2022, 51(2): 0251210
Category: Special Issue for Ultrafast Optics
Received: Nov. 11, 2021
Accepted: Jan. 19, 2022
Published Online: May. 19, 2022
The Author Email: ZHU Lingni (lingxiao431@semi.ac.cn), ZHONG Li (zhongli@semi.ac.cn)