Researching | High-temperature annealing of (2¯01) β-Ga2O3 substrates for reducing structural defects after diamond sawing

Journal of Semiconductors, Volume. 44, Issue 12, 122801(2023)

High-temperature annealing of ( $\bar{2} 01$ ) β-Ga₂O₃ substrates for reducing structural defects after diamond sawing

Pavel Butenko^1、*, Michael Boiko², Mikhail Sharkov², Aleksei Almaev³, Aleksnder Kitsay², Vladimir Krymov², Anton Zarichny³, and Vladimir Nikolaev^1,2

Author Affiliations

¹MISiS University, Moscow 119049, Russia

²Perfect Crystala LLC, St. Petersburg 194223, Russia

³Tomsk State University, Tomsk 634050, Russia

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[2] S I Stepanov, V I Nikolaev, V E Bougrov et al. Gallium oxide: properties and applications− a review. Rev Adv Mater Sci, 44, 63(2016).

[3] P N Butenko, L I Guzilova, A V Chikiryaka et al. Impact on the subsurface layers of the single-crystal β-Ga2O3 wafers induced by a mechanical wear. Mater Sci Semicond Process, 143, 106520(2022).

[4] S Gao, Y Q Wu, R K Kang et al. Nanogrinding induced surface and deformation mechanism of single crystal β-Ga2O3. Mater Sci Semicond Process, 79, 165(2018).

[5] C J Huang, W X Mu, H Zhou et al. Effect of OH− on chemical mechanical polishing of β-Ga2O3 (100) substrate using an alkaline slurry. RSC Adv, 8, 6544(2018).

[6] T Oshima, A Hashiguchi, T Moribayashi et al. Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects. Jpn J Appl Phys, 56, 086501(2017).

[7] M Kasu, T Oshima, K Hanada et al. Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on (-201) β-Ga2O3. Jpn J Appl Phys, 56, 091101(2017).

[8] G K Williamson, W H Hall. X-ray line broadening from filed aluminium and wolfram. Acta Metall, 1, 22(1953).

[9] M E Boiko, M D Sharkov, A M Boiko et al. Investigation of the atomic, crystal, and domain structures of materials based on X-ray diffraction and absorption data: A review. Tech Phys, 60, 1575(2015).

[10] Y Z Yao, Y Sugawara, Y Ishikawa. Observation of dislocations in β-Ga2O3 single-crystal substrates by synchrotron X-ray topography, chemical etching, and transmission electron microscopy. Jpn J Appl Phys, 59, 045502(2020).

[11] Y Z Yao, Y Sugawara, K Sato et al. Etch pit formation on β-Ga2O3 by molten KOH+NaOH and hot H3PO4 and their correlation with dislocations. J Alloys Compd, 910, 164788(2022).

[12] D Z Lu, Q T Jiang, X M Ma et al. Defect-related etch pits on crystals and their utilization. Crystals, 12, 1549(2022).

[13] P Mazzolini, P Vogt, R Schewski et al. Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy. APL Mater, 7, 022511(2019).

[14] H C Huang, Z J Ren, C Chan et al. Wet etch, dry etch, and MacEtch of β-Ga2O3: A review of characteristics and mechanism. J Mater Res, 36, 4756(2021).

[15] K Ogawa, N Ogawa, R Kosaka et al. AFM observation of etch-pit shapes on β-Ga2O3 (001) surface formed by molten alkali etching. Mater Sci Forum, 1004, 512(2020).

[16] A A Zarichny, P N Butenko, M E Boiko et al. The analysis of the etch pits parameters in the (2¯01) plane of the β-Ga2O3 substrate crystals. Materials Physics and Mechanics, 51, 174(2023).

[17] O Ueda, N Ikenaga, K Koshi et al. Structural evaluation of defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth process. Jpn J Appl Phys, 55, 1202BD(2016).

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Pavel Butenko, Michael Boiko, Mikhail Sharkov, Aleksei Almaev, Aleksnder Kitsay, Vladimir Krymov, Anton Zarichny, Vladimir Nikolaev. High-temperature annealing of ( $\bar{2} 01$ ) β-Ga₂O₃ substrates for reducing structural defects after diamond sawing[J]. Journal of Semiconductors, 2023, 44(12): 122801

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Paper Information

Category: Articles

Received: May. 18, 2023

Accepted: --

Published Online: Mar. 13, 2024

The Author Email: Butenko Pavel (PButenko)

DOI:10.1088/1674-4926/44/12/122801

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology