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INFRARED, Volume. 40, Issue 8, 15(2019)

Research Status of Si-based HgCdTe Material Technology Grown by Molecular Beam Epitaxy

Da GAO... Jing-wei WANG, Cong WANG, Zhen LI, Liang-liang WU and Ming LIU |Show fewer author(s)
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    [2] [2] He L, Wu Y, Chen L, et al. Progress in MBE growth of HgCdTe at SITP［C］. SPIE, 2002, 4795: 17-26.

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    GAO Da, WANG Jing-wei, WANG Cong, LI Zhen, WU Liang-liang, LIU Ming. Research Status of Si-based HgCdTe Material Technology Grown by Molecular Beam Epitaxy[J]. INFRARED, 2019, 40(8): 15

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    Received: Jul. 12, 2019

    Accepted: --

    Published Online: Dec. 5, 2019

    The Author Email:

    DOI:10.3969/j.issn.1672-8785.2019.08.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology