INFRARED, Volume. 40, Issue 8, 15(2019)
Research Status of Si-based HgCdTe Material Technology Grown by Molecular Beam Epitaxy
[2] [2] He L, Wu Y, Chen L, et al. Progress in MBE growth of HgCdTe at SITP[C]. SPIE, 2002, 4795: 17-26.
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GAO Da, WANG Jing-wei, WANG Cong, LI Zhen, WU Liang-liang, LIU Ming. Research Status of Si-based HgCdTe Material Technology Grown by Molecular Beam Epitaxy[J]. INFRARED, 2019, 40(8): 15
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Received: Jul. 12, 2019
Accepted: --
Published Online: Dec. 5, 2019
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