[4] [4] RARING J W, SCHT M C, POBLENZ C, et al. Highperfmance blue green laser diodes based on nonpolarsemipolar bulk GaN substrates[C]Proceedings of SPIE 7939, Gallium Nitride Materials Devices VI. San Francisco, Califnia, United States: SPIE, 2011: 79390.

[5] NAKAMURA S. InGaN-based blue laser diodes[J]. IEEE Journal of Selected Topics in Quantum Electronics, 3, 712-718(1997).

[6] [6] MIYOSHI T, MASUI S, OKADA T, et al. 510515 nm InGaNBased Green Laser Diodes on cPlane GaN Substrate[J]. Appl. Phys. Express 2, 2009: 062201.

[7] SCHEIBENZUBER W G, SCHWARZ U T, VEPREK R G, et al. Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes[J]. Physical Review B, 80, 115320(2009).

[8] [8] HU W T, YANG X D, WANG C, et al. Ultracompact visible RGB lasers f defense applications[C]Proceedings of SPIE 7325, Laser Technology f Defense Security V. lo, Flida, United States: SPIE, 2009: 73250Q.

[9] [9] IRONSIDE C N, FIGUEIREDO J M L, ROMEIRA B, et al. Resonant tunneling diodelaser diode optoelectronic integrated circuit operating as a voltage controlled oscillat[C]Proceedings of SPIE 7366, Photonic Materials, Devices, Applications III. Dresden, Germany: SPIE, 2009: 736614.

[10] LERMER T, SCHILLGALIES M, BREIDENASSEL A, et al. Waveguide design of green InGaN laser diodes[J]. Physica Status Solidi A, 207, 1328-1331(2010).

[11] JIANG L R, LIU J P, ZHANG L Q, et al. Suppression of substrate mode in GaN-based green laser diodes[J]. Optics Express, 28, 15497-15504(2020).

[12] SIZOV D S, BHAT R, ZAKHARIAN A, et al. Impact of carrier transport on aquamarine-green laser performance[J]. Applied Physics Express, 3, 122101(2010).

[13] SIZOV D S, BHAT R, ZAKHARIAN A, et al. Carrier transport in InGaN MQWs of aquamarine- and green-laser diodes[J]. IEEE Journal of Selected Topics in Quantum Electronics, 17, 1390-1401(2011).

[14] AVRAMESCU A, LERMER T, MÜLLER J, et al. True green laser diodes at 524 nm With 50 mW continuous wave output power on c-plane GaN[J]. Applied Physics Express, 3, 061003(2010).

[15] TIAN A Q, LIU J P, ZHANG L Q, et al. Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region[J]. Optics Express, 25, 415-421(2017).