Acta Physica Sinica, Volume. 69, Issue 1, 018101-1(2020)
Fig. 1. (a) Device structure; (b) cross-sectional SEM image of the device; (c) energy band diagram; (d) XRD diffraction pattern of the FAPbBr3 NCs (inset: TEM image of the FAPbBr3 NCs). (a) 器件结构示意图; (b) 器件横断面SEM截面图; (c) 能级结构示意图; (d) FAPbBr3 NCs的XRD图谱(插图为其TEM图)
Fig. 2. (a) Normalized electroluminescence and photoluminescence spectra of the device; (b)
Fig. 3. Operating lifetime characteristics of the PEDOT:PSS and NiO-based devices.PEDOT:PSS和NiO空穴注入层的器件寿命特性图
Fig. 4. (a)
The performance of devices with metal-doped NiO.
金属掺杂NiO的器件性能
The performance of devices with metal-doped NiO.
金属掺杂NiO的器件性能
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Electrical properties of Cs-doped NiO films.
Cs掺杂NiO薄膜的电学性能
Electrical properties of Cs-doped NiO films.
Cs掺杂NiO薄膜的电学性能
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Jia-Long Wu, Yong-Jiang Dou, Jian-Feng Zhang, Hao-Ran Wang, Xu-Yong Yang.
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Received: Aug. 21, 2019
Accepted: --
Published Online: Nov. 4, 2020
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