Fig. 1. SRIM simulation of the depth profiling of defects in IG-110 nuclear grade graphite after different fluences of 190 keV He⁺ irradiation. SRIM软件模拟不同注量的190 keV He⁺辐照后IG-110核级石墨中缺陷数量的深度分布

Fig. 2. XRD patterns of the samples: (a) Irr. samples; (b) Ox. samples样品的XRD图谱　(a)仅辐照的样品; (b)仅氧化的样品

Fig. 3. Size and morphology of the samples: (a) Size of untreated sample; SEM morphology of (b) untreated sample; SEM morphology and of Ox. samples that were oxidized for (c) 10, (d) 15, (e) 20, (f) 25 min.样品的尺寸和形貌　(a)未处理样品尺寸; (b)未处理样品的SEM形貌; 氧化(c) 10, (d) 15, (e) 20, (f) 25 min的样品的SEM形貌

Fig. 4. Raman spectra of the samples: (a) Irr. samples; (b) Ox. samples.样品的拉曼光谱　(a)仅辐照的样品; (b)仅氧化的样品

Fig. 5. Evolution of I_D/I_G ratios of the samples: (a) Irr., Irr.-Ox., Ox.-Irr. samples; (b) Ox. samples. I_D/I_G的变化　(a)仅辐照的样品、辐照后氧化的样品和氧化后辐照的样品; (b)仅氧化的样品的I_D/I_G

Fig. 6. Profiles of S-parameter and trends of the evolution of S-parameter: (a), (c) Irr. samples; (b), (d) Ox. samples. 样品中不同深度的S参数和平均S参数随辐照剂量和氧化时间的变化 　(a), (c)仅辐照的样品; (b), (d)仅氧化的样品

Fig. 7. Relationship of the average S- and W-parameter in 250−1250 nm of all samples. 在250—1250 nm的深度范围内平均S参数和平均W参数之间的关系