To address the difficulties in the preparation of ultraviolet （UV） resonance metal nanoarrays on transparent substrates， Al nanoarrays were prepared by electron beam exposure on a non-conducting quartz substrate and their morphology and properties were studied. A Cr metal layer was introduced to overcome the problem of non-conductivity in the electron beam exposure process. Nanorod morphology was optimized by adjustments to the exposure dose and design parameters. The electric field distribution of Al nanorods （excited by 325 nm UV light） was analyzed by using the finite-difference time-domain method. CdSe/ZnS quantum dots were deposited on the surface of Al nanoarrays by using Langmuir–Blodgett technology for fluorescence performance enhancement. The results indicate uniformity in the size distribution of Al nanorods prepared at a 1 200 μC/cm² dose. Four regions with Al nanorods in mutually perpendicular orientations were integrated. Optical analysis results indicate that the fluorescence intensity of CdSe/ZnS quantum dots could be enhanced approximately 1.7 times by the Al nanorod array. Simulation results show that， under UV radiation， the electric field intensities at the ends of the nanorods were higher than at their sides， thereby revealing their influence on the fluorescence enhancement of the quantum dots. The multi-oriented integrated Al nanoarray with quantum dot fluorescence enhancement effects， which was prepared on a non-conducting substrate， provides a new strategy for the luminescence and polarization modulation of quantum dots under backlight excitation.