Fig. 1. XRD pattern of wurtzite ZnS nanocrystals.

Fig. 2. (a) The configuration of a complete microcircuit on a diamond anvil: 1, the Mo electrodes; 2, the exposed diamond anvil; 3, the Al₂O₃ layer deposited on the diamond anvil; 4, the Al₂O₃ layer deposited on the Mo film; (b) the cross section of the designed diamond-anvil-cell.

Fig. 3. The modulus plots of ZnS nanocrystallines under different pressures: (a) 8.4 GPa; (b) 12.6 GPa; (c) 18.3 GPa; (d) 29.8 GPa.

Fig. 4. Pressure dependence of grain resistance (R_g) and grain boundary resistance (R_gb) under high pressure.

Fig. 5. The change of grain boundary relaxation frequency of ZnS nanocrystalline as a function of pressure.