[1] K CHRZANOWSKI. Review of night vision technology. Opto-Electronics Review, 21, 153-181(2013).

[2] J J ZOU, X W GE, Y J ZHANG et al. Negative electron affinity GaAs wire-array photocathodes. Optics Express, 24, 4632-4639(2016).

[3] F CHENG, Y J ZHANG, Y SH QIAN et al. Improved quantum efficiency and stability of GaAs photocathode using favorable illumination during activation. Ultramicroscopy, 202, 128-132(2019).

[4] [4] 蔡志鹏， 杨文正， 唐伟东， 等. 大梯度指数掺杂透射式GaAs光电阴极响应特性的理论分析［J］. 物理学报， 2012， 61（18）： 513-518. doi: 10.7498/aps.61.187901CAIZH P， YANGW ZH， TANGW D， et al. Theoretical analysis of response characteristics for the large exponential-doping transmission-mode GaAs photocathodes［J］. Acta Physica Sinica， 2012， 61（18）： 513-518.（in Chinese）. doi: 10.7498/aps.61.187901

[5] J W SCHWEDE, T SARMIENTO, V K NARASIMHAN et al. Photon-enhanced thermionic emission from heterostructures with low interface recombination. Nature Communications, 4, 1576(2013).

[6] X G JIN, S OHKI, T ISHIKAWA et al. Analysis of quantum efficiency improvement in spin-polarized photocathode. Journal of Applied Physics, 120, 164501(2016).

[7] [7] 赵静， 覃翠， 刘伟伟， 等. 不同掺杂砷化镓光电阴极光电发射性能分析［J］. 光学学报， 2016， 36（10）： 1023001. doi: 10.3788/aos201636.1023001ZHAOJ， QINC， LIUW W， et al. Photoemission performance analysis of GaAs photocathodes with different doping concentrations［J］. Acta Optica Sinica， 2016， 36（10）： 1023001.（in Chinese）. doi: 10.3788/aos201636.1023001

[8] [8] 王自衡， 李诗曼， 石峰， 等. InGaAs 光电阴极的Cs/NF3激活［J］， 光学 精密工程， 2023， 31（9）： 1277-1284. doi: 10.37188/ope.20233109.1277WANGZ H， LISH M， SHIF， et al. Cs/NF3 activation of InGaAs photocathode［J］. Opt. Precision Eng.， 2023， 31（9）： 1277-1284. （in Chinese）. doi: 10.37188/ope.20233109.1277

[9] Y J ZHANG, J ZHAO, J J ZOU et al. The high quantum efficiency of exponential-doping AlGaAs/GaAs photocathodes grown by metalorganic chemical vapor deposition. Chinese Physics Letters, 88-91(2013).

[10] W LIU, Y Q CHEN, W T LU et al. Record-level quantum efficiency from a high polarization strained GaAs/GaAsP superlattice photocathode with distributed Bragg reflector. Applied Physics Letters, 109, 252104(2016).

[11] J ZHAO, W K SHEN, B K CHANG et al. Comparison of module structure of wideband response GaAs photocathode grown by MBE and MOCVD. Optics Communications, 328, 129-134(2014).

[12] H C CASEY Jr, D D SELL, K W WECHT. Concentration dependence of the absorption coefficient for n- and p-type GaAs between 1.3 and 1.6 eV. Journal of Applied Physics, 46, 250-257(1975).

[13] M LEVINSHTEIN, S RUMYANSTEV, M SHUR. Handbook Series on Semiconductor Parameters（Vol.2）(1996).

[14] J J ZOU, B K CHANG, H L CHEN et al. Variation of quantum-yield curves for GaAs photocathodes under illumination. Journal of Applied Physics, 101(2007).

[15] G A ANTYPAS, L W JAMES, J J UEBBING. Operation of III-V semiconductor photocathodes in the semitransparent mode. Journal of Applied Physics, 41, 2888-2894(1970).

[16] [16] 赵静， 常本康， 熊雅娟， 等. 发射层对指数掺杂Ga1-xAlx As/GaAs光阴极性能的影响［J］. 电子器件， 2011， 34（2）：119-124.ZHAOJ， CHANGB K， XIONGY J， et al. Influence of the active layer on exponential-doping Ga1-xAlxAs/GaAs photocathode performances［J］. Chinese Journal of Electron Devices， 2011， 34（2）：119-124.（in Chinese）

[17] Z JING, B K CHANG, Y J XIONG et al. Influence of the antireflection， window， and active layers on optical properties of exponential-doping transmission-mode GaAs photocathode modules. Optics Communications, 285, 589-593(2012).

[18] [18] 张益军. 变掺杂GaAs光电阴极研制及其特性评估［D］. 南京： 南京理工大学， 2012.ZHANGY J. Development and Characteristics Evaluation of Variable Doped GaAs Photocathode［D］. Nanjing： Nanjing University of Science and Technology， 2012. （in Chinese）

[19] C FENG, Y J ZHANG, J LIU et al. Effect of graded bandgap structure on photoelectric performance of transmission-mode Al_xGa_1-xAs/GaAs photocathode modules. Applied Optics, 56, 9044-9049(2017).

[20] T LIN, J N XIE, T J ZHANG et al. Studies on the material and photoluminescence characteristics of the structure of Al_0.9Ga_0.1As/GaAs DBR with varied doping. Journal of Electronic Materials, 52, 730-737(2023).