Acta Photonica Sinica, Volume. 32, Issue 7, 826(2003)

(Cs,O) Activation Technique for NEA Photocathode

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    References(8)

    [1] [1] Turnbull A A,Evans G B.Photoemission from GaAs-Cs-O. Journal of Physics D: Applied Physics,1968,1:155~160

    [2] [2] Fisher D G. The effect of Cs-O activation temperature on the surface escape probability of NEA (In,Ga)As photocathodes.IEEE Transactions on Electron Devices, 1974,ED-21:541~542

    [3] [3] Williams B F,Tietjien J J.Current status of negative electron affinity devices.Proceedings of the IEEE, 1971,59(10):1489~1497

    [4] [4] Fisher D G,Enstrom R E,Escher J S,et al. Photoelectron surface escape probability of (Ga,In)As: Cs-O in the 0.9 to 1.6 μm.Journal of Applied Physics,1972,43(9):3815~3823

    [5] [5] Spicer W E,Lindau I,Su C Y,et al. Core-level photoemission of the Cs-O adlayer of NEA GaAs photocathodes.Applied Physics Letters, 1978,33(11):934~935

    [9] [9] Goldstein B. LEED-AUGER characterization of GaAs during activation to negative electron affinity by the adsorption of Cs and O.Surface Science,1975,47:143~161

    [10] [10] Rodway D C,Allenson M B. In situ suurface study of the activating layer on GaAs(Cs,O) photocathodes.Journal of Physics.D: Applied Physics, 1986,19:1353~1371

    [11] [11] Sen P,Pickard D S,Schneider J E,et al. Lifetime and reliability results for a negative electron affinity photocathode in a demountable vacuum system.The Journal of Vacuum Science and Technology,1998,B16(6):3380~3384

    CLP Journals

    [1] Guo Xiangyang, Wang Xiaohui, Chang Benkang, Zhang Yijun, Qiao Jianliang. Preparation Technique of Negative-Electron-Affinity GaN Photocathode[J]. Acta Optica Sinica, 2011, 31(2): 219003

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. (Cs,O) Activation Technique for NEA Photocathode[J]. Acta Photonica Sinica, 2003, 32(7): 826

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    Paper Information

    Category: Optoelectronics

    Received: Apr. 7, 2002

    Accepted: --

    Published Online: Sep. 17, 2007

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