[7] [7] Roberts D A, Catella G C. Simplified characterization of nonlinear optical crystals: a plea for standardization of nomenclature and conventions ［J］. IEEE Journal of Quantum Electronics,1992,28(10): 2057-2074.

[8] [8] Finsterbusch K, Bayer A, Zacharias H. Tunable, narrow-band picosecond radiation in the mid-infrared by difference frequency mixing in GaSe and CdSe［J］. Applied Physics B, 2004, 79(4): 457-462.

[9] [9] Alford W J, Smith A V. Wavelength variation of the second-order nonlinear coefficients of KNbO3, KTiOPO4, KTiOAsO4, LiNbO3, LiIO3, β-BaB2O4, KH2PO4 and LiB3O5 crystals: a test of Miller wavelength scaling［J］. Office of Scientific and Technical Information Technical Reports,2000,18(4): 524-533.

[10] [10] Kolesnikov N N, James R B, Berzigiarova N S, et al. HPVB and HPVZM shaped growth of CdZnTe, CdSe and ZnSe crystals［J］. International Symposium on Optical Science and Technology, 2003: 93-104.

[11] [11] Arthur L. Robinson, Richard H Bube. Photoelectronic properties of defects in CdSe single crystals［J］. Journal of Applied Physics, 1971, 42(13): 5280-5295.

[12] [12] Steininger J. Growth of CdSe single crystals by temperature gradient solution zoning in excess Se［J］. Materials Research Bulletin, 1968, 3(7): 595-598.

[13] [13] Burger A, Henderson D O, Morgan S H, et al. Purification, crystal growth and characterization of CdSe single crystals［J］. Journal of Crystal Growth, 1991, 109(1-4): 298-303.

[14] [14] Burger A, Roth M. Growth of medium electrical resistivity CdSe single crystals by the temperature gradient solution zoning technique［J］. Journal of Crystal Growth, 1984, 67(3): 507-512.

[15] [15] Piper W W, Polich S J. Vapor phase growth of single crystals of II-VI compounds［J］. Journal of Applied Physics, 1961, 32(7): 1278-1279.

[16] [16] Manfredotti C. Electron trapping levels in cadmium selenide single crystals［J］. Journal of Applied Physics, 1973, 44(12): 5463.

[17] [17] Akimov V A, Frolov M P, Korostelin Y V, et al. Vapor growth of CdSe∶Cr and CdS∶Cr single crystals for mid-infrared lasers［J］. Optical Materials, 2009, 31(12): 1888-1890.

[19] [19] Zhu S F, Zhao B J, Jin Y R, et al. Growth and characterization of CdSe single crystals by modified vertical vapor phase method［J］. Journal of Crystal Growth, 2002, 240: 454-458.

[24] [24] Wang J, Yuan L, Zhang Y, et al. Generation of 320 mW at 10.20 μm based on CdSe long-wave infrared crystal［J］. Journal of Crystal Growth, 2018.

[25] [25] Akimov V A, Frolov M P, Korostelin Y V, et al.Vapour growth of II-VI single crystals doped by transition metals for mid-infrared lasers［J］. Physica Status Solidi (c), 2006, 3: 1213-1216.

[26] [26] Herbst R L. Singly resonant CdSe infrared parametric oscillator［J］. Applied Physics Letters,1972,21(5): 189.

[27] [27] Davydov A A, Kulevskii L A, Prokhorov A M, et al. A tunable infrared parametric oscillator in a CdSe crystal［J］. Optics Communications, 1973, 9(3): 234-236.

[28] [28] Allik T H, Chandra S, Rines D M, et al. Tunable 7-12 μm optical parametric oscillator using a Cr,Er∶YSGG laser to pump CdSe and ZnGeP2 crystals［J］. Optics Letters, 1997, 22(9): 597-599.

[29] [29] Watson M A, O’Connor M V, Shepherd D P, et al. Synchronously pumped CdSe optical parametric oscillator in the 9-10 mm region[J].Opt. Lett.,2003(28): 1957-1959.

[30] [30] Yao B Q, Li G, Zhu G L, et al. Comparative investigation of long-wave infrared generation based on ZnGeP2 and CdSe optical parametric oscillators[J]. Chin. Phys. B,2012,21: 034213.

[31] [31] Yuan J H, Chen Y, Duan X M, et al. CdSe optical parametric oscillator operating at 12.07 μm with 170 mW output［J］. Optics & Laser Technology, 2017.

[32] [32] Chen Y, Liu G, Yang C, et al. 1 W, 10.1 μm, CdSe optical parametric oscillator with continuous-wave seed injection［J］. Optics Letters, 2020, 45(7): 2119-2122.

[33] [33] Schepler K, Kück S, Shiozawa L. Emission spectroscopy in CdSe[J]. J. Luminesc, 1997: 72-74, 116-117.

[34] [34] McKay J, Schepler K L, Catella G C. Efficient grating-tuned mid-infrared Cr2+∶CdSe laser[J]. Opt. Lett,1999,24: 1575-1577.

[35] [35] Kasiyan V, Dashevsky Z, Shneck R, et al. Novel lasing materials based on CdSe crystals doped with Cr[J]. Proc. SPIE,2003,5123: 79-84.

[36] [36] Mckay J, Schepler K L, Catella G C. Efficient grating-tuned mid-infrared Cr2+: CdSe laser［J］. Optics Letters, 1999, 24(22): 1575-1577.

[37] [37] Akimov V A, Kozlovskii V I, Korostelin Yu V. Efficient pulsed Cr2+∶CdSe laser continuously tunable in the spectral range from 2.26 to 3.61 μm［J］. quantum electronics, 2008, 38(3): 205-208.

[38] [38] Gubin M A, Kireev A N, Yu V, et al. Tunable single-frequency CW Cr2+∶CdSe laser[J]. Bull. Lebedev Phys.Inst, 2011, 38(7): 205-208.

[39] [39] Kozlovskii V I, Korostelin Y V, Okhotnikov O G, et al. CW Cr2+∶CdSe laser pumped by semiconductor disk laser［J］. Bulletin of the Lebedev Physics Institute, 2012, 39(6): 181-184.

[40] [40] Lazarev V A, Tarabrin M K, Kovtun A A, et al. Continuous-wave broadly tunable diode laser array-pumped mid-infrared Cr2+∶CdSe laser［J］. Laser Physics Letters, 2015, 12(12): 125003.

[41] [41] Fernandez T T, Tarabrin M T, Wang Y, et al. Thermo-optical and lasing characteristics of Cr2+-doped CdSe single crystal as tunable coherent source in the mid-infrared［J］. Optical Materials Express, 2017, 7(11): 3815.