Acta Physica Sinica, Volume. 69, Issue 6, 060201-1(2020)

Transient characteristics of electron beam induced current in dielectric and semiconductor sample

Wei-Qin Li1,2、*, Zhi-Sheng Huo1, and Hong-Bin Pu1
Author Affiliations
  • 1School of Automation & Information Engineering, Xi’an University of Technology, Xi’an 710048, China
  • 2Department of Electronic Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China
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    Figures & Tables(14)
    Schematic of currents generated by the interaction of e-beams with samples.
    Schematic diagram of the experimental device.
    Simulated (lines) and experimental (squares) results of total electron yield.
    Simulated free charge densities N(t) along the incident direction.
    Simulated net space densities (P(t) – N(t)) along the incident direction.
    Simulated (a) space potentials V(t) and (b) space fields F(t) along the incident direction.
    Simulated (line) and experimental (squares) effective emission currents II.
    (a) Simulated IEBIC and ITE; (b) simulated (line) and experimental (squares) IS.
    Simulated IEBIC in the steady state under the different values of beam current IB.
    Simulated ITE as a function of the irradiation time in the different beam energies EB.
    Simulated IEBIC as a function of the irradiation time in the different beam energies EB.
    • Table 1.

      Default values of parameters in the scattering process.

      电子散射过程参数默认设置

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      Table 1.

      Default values of parameters in the scattering process.

      电子散射过程参数默认设置

      参数SiO2Si
      ρ/g·cm–32.262.32
      $\bar A $/g·mole–12028.1
      $\bar J $/keV 0.1390.173
      $\bar Z $1014
    • Table 2. Default values of parameters.

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      Table 2. Default values of parameters.

      束能EB/keV 束流IB/nA 扫描区域/mm2扫描周期/s
      10, 15, 20, 301.61 × 11.2
    • Table 3. Default values of parameters.

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      Table 3. Default values of parameters.

      参数取值
      束能EB/keV 10
      束流IB/nA 1.6
      体缺陷密度/cm–31017
      界面俘获密度/cm–21014
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    Wei-Qin Li, Zhi-Sheng Huo, Hong-Bin Pu. Transient characteristics of electron beam induced current in dielectric and semiconductor sample[J]. Acta Physica Sinica, 2020, 69(6): 060201-1

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    Paper Information

    Category:

    Received: Oct. 10, 2019

    Accepted: --

    Published Online: Nov. 19, 2020

    The Author Email:

    DOI:10.7498/aps.69.20191543

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