Acta Physica Sinica, Volume. 68, Issue 21, 217501-1(2019)
Figures & Tables(10)
Fig. 1. (a) Operation mechanism of Peltier element as thermal diode; (b) the operation mechanism of
Fig. 2. (a) Schematic diagram of the full solid state MR model based on a thermal diode[21]; (b) comparison of maximum SCP and exergy efficiency between MR system with thermal diode and parallel-plate AMR at different temperature spans and different frequencies[26]. (a) 基于热二极管的全固态MR模型结构示意图[21]; (b) 带有热二极管的MR系统与平行板AMR在不同温跨和不同频率下最大SCP和㶲效率的比较[26]
Fig. 4. (a) Schematic diagram of a full solid state MR model based on thermal switch[30]; (b) operating principle[23]; (c) variation of COP and SCP with different current[23]; (d) variation of COP and SCP with the length of Peltier element [23]. (a)基于热二极管的全固态MR模型示意图[30]; (b)工作原理[23]; (c)不同电流下COP和SCP的变化[23]; (d) Peltier元件不同长度下COP和SCP的变化[23]
Fig. 5. (a) Schematic diagram of the full solid state magnetic refrigeration system[24]; (b) MUR cycle principle[31]; (c) Gd-only[31]; (d) parallel sheets[31]; (e) topology optimization structure[31]; (f) experiment setup[31]; (g) variation of maximum SCP with different Peltier supply voltages[31]; (h) variation of Peltier COP and temperature difference with different rotating speeds[31]. (a) 全固态MR系统示意图[24]; (b) MUR循环原理[31]; (c) 仅Gd[31]; (d) 平行板[31]; (e) 拓扑优化结构[31]; (f) 实验设置[31]; (g)最大SCP随Peltier电源电压的变化[31]; (h) Peltier COP和温差随转速的变化[31]
Fig. 6. (a) A full solid state magnetic refrigeration model based on
Fig. 7. (a) Working mechanism of the cascaded full solid state magnetic refrigeration system[33]; (b) variation of temperature span with operating temperature for different MCM components[33]; (c) dependence of the temperature span on the operating frequency for different thermal conductivities of the MCM[34]. (a) 级联全固态MR系统的工作机制[33]; (b) 不同MCM元件数量下温跨随工作温度的变化[33]; (c) 不同热导率的MCM下温跨与工作频率的关系[34]
Fig. 8. (a) Variation of temperature span with rotating speed at different lattice numbers[24]; (b) variation of maximum SCP with rotating speed at different temperature spans and lattice numbers[24]; (c) variation of maximum SCP and COP with different rotating speeds at 32 lattices[24]. (a)不同网格数下温跨与转速的关系[24]; (b)不同温跨网格数下最大SCP与转速的关系[24]; (c) 32网格下最大SCP和COP与转速的关系[24]
Table 2. Comparison of main performances between full solid state MR model and traditional AMR model.
View tableView in ArticleTable 2. Comparison of main performances between full solid state MR model and traditional AMR model.
类型 磁工质 传热介质 工作频率/Hz 温跨/K SCP/W·kg–1 COP 参考文献 全固态MR 准2D全固态MR Gd Peltier元件 0—225 5—15 1 × 104 — [ 21 ]全固态MR Gd Peltier元件 10 50 1.5 × 104 2.8 [ 27 ]2D全固态MR Gd Peltier元件 20 — — 5.3—6.5 [ 28 ]全固态MR Gd Peltier元件 20—200 60 — 4.0 [ 30 ]1D全固态MR Gd Peltier元件 — 5 — 0.96—9.21 [ 23 ]准2D全固态MR Gd Peltier元件 — 10 79.8 — [ 31 ]1D全固态MR Gd kH元件 0—500 2.5 — 1.5 [ 32 ]1D全固态MR Gd kH元件 — 11.5 — 4.0 [ 33 ]准2D全固态MR Gd Cu块 — 5—50.9 2.6—105.8 1.5—4.2 [ 24 ]传统AMR 1D AMR Gd 水 — 15 — 1.49—5.27 [ 42 ]2D AMR Gd 水 — 3 — 5.4 [ 43 ]1D AMR Gd 水 0.125 6 — 12.16 [ 44 ]AMR/旋转床 Gd 水+乙二醇 0~10 < 18.9 — — [ 45 ]2D AMR Gd 水+乙二醇 0.75 10.2 60.59 3.1 [ 46 ]2D AMR Gd 水 1.5 14.5 — ~2 [ 47 ]AMR/旋转床 Gd 水+乙二醇 0.8 7.1 — 0.54 [ 48 ]1D AMR Gd 水+乙二醇 0.3—10 20 100 7.6—11.2 [ 49 ]2D AMR ${\rm Gd_5(Si}_x{\rm Ge}_{1-x})_4 $ 水 1.25 ~10—16 — ~5 [ 50 ]AMR/平行板床 ${\rm MnFeP}_{1-x}{\rm As}_x $ 水+乙二醇 0.8 32 — — [ 51 ]1D AMR LaFeSiMnHy 水+乙二醇 0.15 19.8 12.4 — [ 52 ]
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Guo-Qiang Liu, Ya-Jiao Ke, Kong-Bin Zhang, Xiong He, Feng Luo, Bin He, Zhi-Gang Sun.
Paper Information
Received: Jul. 25, 2019
Accepted: --
Published Online: Sep. 17, 2020
The Author Email:
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