[1] [1] A. Zakery, S. R. Elliott. Optical properties and applications of chalcogenide glasses: a review［J］. J. Non-Cryst. Solids., 2003, 330(1-3): 1～12

[2] [2] Keiji Tanaka. Photoinduced processes in chalcogenied glasses［J］. J. Non-Cryst. Solids., 1996, 1(4): 567～571

[3] [3] J. M. González-Leal, R. Prieto-Alcón, J. A. Angel et al.. Optical properties of thermally evaporated amorphous As40S60-xSex films［J］. J. Non-Cryst. Solids., 2003, 315(1-2): 134～143

[4] [4] Bruno Bureau, Xianghua Zhang, Frederic Smektala et al.. Recent advances in chalcogenide glasses［J］. J. Non-Cryst. Solids., 2004, 345-346: 276～283

[5] [5] Sandrine Hocdé, Catherine Boussard-Plédel, Gilles Fonteneau et al.. Recent developments in chemical sensing using infrared glass fibers［J］. J. Non-Cryst. Solids., 2000, 274(1-3): 17～22

[6] [6] J. Troles, F. Smektala, G. Boudebs et al.. Chalcogenide glasses as solid state optical limiters at 1.064 μm［J］. Opt. Mater., 2004, 25(2): 231～237

[7] [7] Masaki Asobe. Nonlinear optical properties of chalcogenide glass fibers and their application to all-optical switching［J］. Opt. Fiber Technol., 1997, 3(2): 142～148

[8] [8] L. E. Zou, B. X. Chen, H. Hamanaka et al.. Fabrication of an As2S8 stripe waveguide with an optical stopping effect by exposure to ultraviolet irradiation［J］. Appl. Phy. Lett., 2006, 88(15): 153510-1～153510-3

[9] [9] L. E. Zou, B. X. Chen, L. P. Du et al.. Photo- and thermally induced changes in the refractive index and film thichness of amorphous As2S8 film［J］. J. Appl. Phys., 2008, 103(12): 123523-1～123523-5

[10] [10] Zou Lin′er, Chen Baoxue, Chen Lin et al.. Study on As2S8 glass stripe waveguide fabrication using illumination ［J］. Acta Optica Sinica, 2006, 26(7): 1043～1047

[11] [11] Liu Chuanbiao, Wei Aixiang, Liu Yi. Optical constant and dielectric properties of erbium oxide thin film［J］. Acta Optica Sinica, 2009, 29(6): 1724～1728

[12] [12] Lu Baowen, Xu Xueke, Yu Xiang et al.. Optical properties and structures of silver thin films deposited by thermal evaporation with different deposition rate［J］. Acta Optica Sinica, 2010, 30(1): 283～286

[13] [13] Cui Dongmeng, Xie Quan, Chen Qian et al.. Study on the electronic structure and optical properties of Ru2Si3 epitaxial on Si(001)［J］. Acta Optica Sinica, 2009, 29(11): 3152～3156

[14] [14] O. I. Shpotyuk, J. Filipecki, M. Hyla et al.. Coordination defects in chalcogenide amorphous semiconductors studied by positron annihilation［J］. Physica B: Condensed Matter, 2001, 308-310: 1011～1014

[15] [15] F. Bass, V. Halpern, M. I. Klinger. Theoretical model of photostructural changes in glassy semiconductors［J］. Phys. Lett. A, 2000, 278(3): 165～171

[16] [16] Pankaj Sharma, S. C. Katyal. Optical study of Ge10Se90-xTex glassy semiconductors［J］. Thin Solid Films, 2007, 515(20-21): 7966～7970