80 GHz germanium waveguide photodiode enabled by parasitic parameter engineering

Yang Shi; De Zhou; Yu Yu; Xinliang Zhang

doi:10.1364/PRJ.416887

Photonics Research, Volume. 9, Issue 4, 605(2021)

80 GHz germanium waveguide photodiode enabled by parasitic parameter engineering

Yang Shi^1、†, De Zhou^1、†, Yu Yu^*, and Xinliang Zhang

Wuhan National Laboratory for Optoelectronics & School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

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Fig. 1. Cross-section view and equivalent circuit for a conventional PD.

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Fig. 2. (a) Simulated bandwidth varying with Rs and Lp. (b) Calculated Rs varying with p-type doping concentration.

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Fig. 3. (a) 3D schematic of the PD-A. (b) Cross-section of the PD-A with full silicon P++ doping. (c) Microscopic image for the PD-A/B with inductor. (d) Microscopic image for the PD-REF without inductor.

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Fig. 4. I-V characteristics of PDs at dark and with light incidence.

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Fig. 5. Measured and fitted bandwidth characteristics of Ge PDs.

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Table 1. Silicon Doping and Electrode Inductors of Three Kinds of PDs
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Table 1. Silicon Doping and Electrode Inductors of Three Kinds of PDs
Type Silicon Doping Simulated Inductor
PD-A $P + +$ With 240 pH
PD-B $P +$ With 300 pH
PD-REF $P +$ Without

Table 2. Responsivities and Dark Currents of Three Kinds of PDs
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Table 2. Responsivities and Dark Currents of Three Kinds of PDs
Type Responsivity (A/W) Dark Current (nA)
PD-A 0.89 6.4
PD-B 1.00 6.0
PD-REF 1.00 4.5

Table 3. Comparison of the High-Speed Waveguide-Coupled Ge PDs

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Table 3. Comparison of the High-Speed Waveguide-Coupled Ge PDs

Refs.	Type	Dark Current (nA)	Responsivity (A/W)	Bandwidth (GHz)	Detectivity ( $cm \cdot {Hz}^{1 / 2} \cdot W^{- 1}$ )
[4]	Vertical	19	0.6	50	2.56 × 10⁹
[5]	Vertical	3000	0.75	60	6.85 × 10⁸
[6]	Vertical	61	0.85	67	4.30 × 10⁹
[7]	Lateral	4000	0.8	120	8.94 × 10⁸
[8]	Lateral	2.5	0.72	67	6.78 × 10⁹
[9]	Lateral	40	0.5	50	3.13 × 10⁹
This work	Vertical	6.4	0.89	80	1.33 × 10¹⁰

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Yang Shi, De Zhou, Yu Yu, Xinliang Zhang, "80 GHz germanium waveguide photodiode enabled by parasitic parameter engineering," Photonics Res. 9, 605 (2021)

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