Photonics Research, Volume. 9, Issue 4, 605(2021)
80 GHz germanium waveguide photodiode enabled by parasitic parameter engineering
Figures & Tables(8)
Fig. 1. Cross-section view and equivalent circuit for a conventional PD.
Fig. 2. (a) Simulated bandwidth varying with
Fig. 3. (a) 3D schematic of the PD-A. (b) Cross-section of the PD-A with full silicon
Fig. 4.
Table 1. Silicon Doping and Electrode Inductors of Three Kinds of PDs
View tableView in ArticleTable 1. Silicon Doping and Electrode Inductors of Three Kinds of PDs
Type Silicon Doping Simulated Inductor PD-A With 240 pH PD-B With 300 pH PD-REF Without
Table 2. Responsivities and Dark Currents of Three Kinds of PDs
View tableView in ArticleTable 2. Responsivities and Dark Currents of Three Kinds of PDs
Type Responsivity (A/W) Dark Current (nA) PD-A 0.89 6.4 PD-B 1.00 6.0 PD-REF 1.00 4.5
Table 3. Comparison of the High-Speed Waveguide-Coupled Ge PDs
View tableView in ArticleTable 3. Comparison of the High-Speed Waveguide-Coupled Ge PDs
Refs. Type Dark Current (nA) Responsivity (A/W) Bandwidth (GHz) Detectivity ( ) [ 4 ]Vertical 19 0.6 50 2.56 × 109 [ 5 ]Vertical 3000 0.75 60 6.85 × 108 [ 6 ]Vertical 61 0.85 67 4.30 × 109 [ 7 ]Lateral 4000 0.8 120 8.94 × 108 [ 8 ]Lateral 2.5 0.72 67 6.78 × 109 [ 9 ]Lateral 40 0.5 50 3.13 × 109 This work Vertical 6.4 0.89 80 1.33 × 1010
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Yang Shi, De Zhou, Yu Yu, Xinliang Zhang. 80 GHz germanium waveguide photodiode enabled by parasitic parameter engineering[J]. Photonics Research, 2021, 9(4): 605
Paper Information
Category: Integrated Optics
Received: Dec. 8, 2020
Accepted: Feb. 7, 2021
Published Online: Apr. 6, 2021
The Author Email: Yu Yu (yuyu@mail.hust.edu.cn)
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