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Chinese Journal of Quantum Electronics, Volume. 38, Issue 2, 219(2021)

Research progress on photoelectric properties of Ta5+ and Nb5+ doped β-Ga2O3single crystals

Chao WANG1...2, Qinglin SAI1 and Hongji QI1 |Show fewer author(s)
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    WANG Chao, SAI Qinglin, QI Hongji. Research progress on photoelectric properties of Ta5+ and Nb5+ doped β-Ga2O3single crystals[J]. Chinese Journal of Quantum Electronics, 2021, 38(2): 219

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    Received: Oct. 21, 2020

    Accepted: --

    Published Online: Sep. 1, 2021

    The Author Email:

    DOI:10.3969/j.issn.1007-5461. 2021.02.010

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology