As a wide band gap semiconductor material, β-Ga2O3 has attracted wide attention from domestic and foreign scholars in recent years due to its superior optical properties, electrical properties and broad application prospects. Based on the in-depth research of our team on the two important topics of how to prepare β-Ga2O3 single crystals and how to control the electrical and optical properties of β-Ga2O3 single crystals by doping with group V ions, the preparation methods of β-Ga2O3 single crystals, the electrical and optical properties of Ta5+ and Nb5+ doped β-Ga2O3 single crystals are reviewed.