Fig. 1. Schematic structure of In_xGa_{1 – x}N/GaN spherical CSQD.

Fig. 2. (a) Linear, nonlinear, and total ACs and (b) RICs for 1s–1p, 1p–1d, and 1d–1f transitions as a function of incident photon energy in In_0.5Ga_0.5N/GaN (5 nm/3 nm) CSQD with and without impurity.

Fig. 3. (a) Linear, nonlinear, and total ACs and (b) RICs for 1s–1p, 1p–1d, and 1d–1f transitions each as a function of incident photon energy in In_0.5Ga_0.5N/GaN (5 nm/3 nm) CSQD with and without the BEF.

Fig. 4. (a) Linear, nonlinear, and total ACs and (b) RICs for 1s–1p, 1p–1d, and 1d–1f transitions each as a function of incident photon energy for x = 0.2, 0.5, 0.8 in In_xGa_{1 – x}N/GaN (5 nm/3 nm) CSQD with impurity and BEF.

Fig. 5. (a) Total ACs and (b) RICs versus incident photon energy for 1s–1p, 1p–1d, and 1d–1f transitions for R_c = 2.5, 3, and 5 nm in In_0.5Ga_0.5N/GaN (R_c/3 nm) CSQDs with the impurity and the BEF.

Fig. 6. Total ACs versus incident photon energy of 1s–1p, 1p–1d, and 1d–1f transitions for various values of the incident optical intensity I in In_0.5Ga_0.5N/GaN (5 nm/3 nm) CSQDs (a) with Z = 0 and BEF = 0, (b) with Z = 1 and BEF = 0, and (c) with Z = 1 and BEF ≠ 0.