Fig. 1. Preparation of chalcogenide ridge optical waveguide flow by hot stamping method

Fig. 2. Image of As₂S₃ chalcogenide ridge optical waveguide after hot imprinting without covering layer

Fig. 3. Basic mode optical field distribution with and without Ge₂₀Sb₁₅Se₆₅ covering layer

Fig. 4. Profile of As₂S₃ chalcogenide ridge optical waveguide with Ge₂₀Sb₁₅Se₆₅ covering layer prepared at different thermoplastic temperatures

Fig. 5. The surface of As₂S₃ chalcogenide ridge optical waveguide with Ge₂₀Sb₁₅Se₆₅ covering layer prepared at thermoplastic temperature of 290 ℃ and demolding temperature of 140 ℃

Fig. 6. The surface of As₂S₃ chalcogenide ridge optical waveguide with Ge₂₀Sb₁₅Se₆₅ covering layer prepared at different demolding temperatures and a thermoplastic temperature of 290 ℃

Fig. 7. Scanning electron micrograph of As₂S₃ chalcogenide ridge optical waveguide with Ge₂₀Sb₁₅Se₆₅ chalcogenide film covering layer about 70 nm thick

Fig. 8. As₂S₃ chalcogenide ridge optical waveguide insertion loss of different lengths （at wavelength of 1 550 nm）