Low-loss chalcogenide optical waveguide is the key basis of chalcogenide integrated photonic devices. At present, the traditional lithography and etching techniques are mainly used to prepare chalcogenide optical waveguide, but chalcogenide glass is easily corroded by alkaline solution and plasma gas during the etching process, which makes it difficult to control the size and shape of the waveguide, and deteriorates the roughness of the waveguide sidewall and surface. Hot stamping technology is a novel technique for preparing nano or submicron scale structures, which is particularly suitable for use in chalcogenide glass film materials with low glass transition temperature. The sidewall and surface of ridge optical waveguide prepared by this method are smoother, thereby reducing surface light scattering and transmission loss. In this paper, As₂S₃ chalcogenide ridge optical waveguide was prepared by hot stamping method. Through the experiment, it is found that only shallow indentation appeared on the chalcogenide film when the thermoplastic temperature was near the glass transition temperature of As₂S₃ chalcogenide glass (197 ℃). In order to better fill the mold with the chalcogenide film, the thermoplastic temperature should be increased to 250 ℃. However, the surface of the As₂S₃ waveguide prepared at the high thermoplastic temperature will have a large number of crystallization and adhesion problems during demolding, resulting in poor surface quality and incomplete profile of the waveguide, and making it difficult to obtain high quality As₂S₃ chalcogenide ridge optical waveguide. By depositing a layer of Ge₂₀Sb₁₅Se₆₅ chalcogenide film with thickness of about 70 nm on the As₂S₃ chalcogenide film as a covering layer, the surface degradation of the waveguide layer is inhibited by means of the similar topological connection of chalcogenide glass and the excellent thermal stability of Ge₂₀Sb₁₅Se₆₅. And the simulation results show that after adding the covering layer, the energy of the basic mode optical field is mainly concentrated in the As₂S₃ waveguide layer, and the optical field in the covering layer area is weak, so the influence of the covering layer on the optical field can be ignored. The experimental results show that a complete waveguide profile can be obtained under the action of Ge₂₀Sb₁₅Se₆₅ covering layer at a thermoplastic temperature of 290 ℃. This thermoplastic temperature can maintain the low viscosity of As₂S₃ chalcogenide film to fully fill the mold, and also soften the Ge₂₀Sb₁₅Se₆₅ covering layer to easily shape a complete waveguide profile. In addition, in order to obtain high quality waveguide profile after hot stamping, the demolding temperature is also an important parameter affecting the quality of waveguide. The experiments show that too low or too high demolding temperature will increase the difficulty of demolding, resulting in incomplete surface of chalcogenide films. Continuously optimizing the preparation process parameters through extensive experiments, the As₂S₃ chalcogenide ridge optical waveguide with ridge width of 4 μm and ridge height of 950 nm was prepared with a 70 nm thick Ge₂₀Sb₁₅Se₆₅ chalcogenide film covering layer under the hot stamping process with thermoplastic temperature of 290 ℃, pressure of 0.5 MPa, hot pressing time of 8 min and demolding temperature of 140 ℃, exhibiting complete waveguide morphology. The experiment shows that this covering layer can effectively inhibit the degradation of the As₂S₃ chalcogenide film during the hot stamping process, and solve the adhesion problem during demolding. By using the cut-back method to measure the insertion loss and linear fitting, the transmission loss of As₂S₃ chalcogenide ridge optical waveguide is about 0.48 dB/cm@1 550 nm, indicating that the prepared As₂S₃ chalcogenide ridge optical waveguide with Ge₂₀Sb₁₅Se₆₅ covering layer has low transmission loss. These works provide a new method for preparing low-loss chalcogenide integrated photonic devices.