Laser & Optoelectronics Progress, Volume. 58, Issue 21, 2123001(2021)
Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN-Based LEDs with Different Emission Wavelengths
Figures & Tables(5)
Fig. 1. Relationship between 3 dB modulation bandwidth and injection current of LEDs with different luminous wavelengths under different effective active area thicknesses thickness. (a) 400 nm; (b) 455 nm; (c) 525 nm
Fig. 2. Relationship between 3 dB modulation bandwidth and injection current of LEDs with different luminous wavelengths under different thickness of active region of quantum well layer. (a) 400 nm; (b) 455 nm; (c) 525 nm
Fig. 3. Relationship between current and 3 dB modulation bandwidth of LED with different emitting wavelengths
Fig. 4. Relationship between 3 dB modulation bandwidth of LED and In component under different current densities
Table 1. ABC model parameters of LED at different wavelengths[7]
View tableTable 1. ABC model parameters of LED at different wavelengths[7]
Wavelength /nm A /s-1 B /（cm3·s-1） C /（cm6·s-1） 400 6.07×106 3.00×10-11 0.80×10-30 455 8.65×106 3.00×10-11 1.00×10-30 525 3.07×107 3.00×10-11 1.66×10-30
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Yongbing Zhao, Chenchen Qian. Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN-Based LEDs with Different Emission Wavelengths[J]. Laser & Optoelectronics Progress, 2021, 58(21): 2123001
Paper Information
Category: Optical Devices
Received: Jan. 19, 2021
Accepted: Mar. 8, 2021
Published Online: Nov. 1, 2021
The Author Email: Zhao Yongbing (zhaoyb@yctu.edu.cn)
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