The traditional ABC model is used to study the dynamic recombination process of carriers in InGaN quantum wells. Based on the traditional ABC model, the carrier recombination rate and lifetime are calculated and the relationship between the 3 dB modulation bandwidth of InGaN-based LEDs with different emission wavelengths and the carrier recombination mechanism is studied. The calculation and analysis results show that under the same injection current, with the reduction in the effective active region thickness and quantum well layer thickness, the 3 dB modulation bandwidth of the 400 nm near-ultraviolet, 455 nm blue, and 525 nm green light-emitting wavelength of LEDs increases significantly. At the injection current density of 100 A/cm², the 3 dB modulation bandwidth of the 400, 455, and 525 nm wavelength LEDs are 62, 88, and 376 MHz, respectively. At the same current density, the 3 dB modulation bandwidth of LED increases with the increase of the In composition (the ratio of the atomic number fraction of In element to the sum of the atomic number fraction of In and Ga elements). Moreover, because of the high In composition of the 525 nm wavelength LED, the thickness of effective active region is small and the carrier concentration in the active region is high. Moreover, the 3 dB modulation bandwidth of the 525 nm green LED reaches 376 MHz at high current density.