Chinese Journal of Quantum Electronics, Volume. 22, Issue 1, 75(2005)
Pressure effect on the polarization of electronic excited state in a GaN/GaAlN quantum well
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[in Chinese], [in Chinese], [in Chinese]. Pressure effect on the polarization of electronic excited state in a GaN/GaAlN quantum well[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 75
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