Fig. 1. The development roadmap of the 1.0~1.7 μm InGaAs FPA detectors in SITP

Fig. 2. The photographs of the 2580×2048 InGaAs FPA detector assembly in SITP

Fig. 3. The imaging demonstration of the SWIR InGaAs FPA under heavy fog (uncorrected raw image, 2021.4.8, Taian in Shandong)(a) visible image，(b) SWIR image, distance 1.8 km, (c) SWIR image, distance 9.9 km

Fig. 4. The surface morphologies of the FPA during different processing stages：（a）after polishing of the InP substrate，（b）after ICP etching of the thinnest InP layer，（c）the spectral quantum efficiencies vs substrate thinkness

Fig. 5. The three-dimensional schematic illustration of the InGaAs FPA surfaces integrated with different periodic MIE scatting structures：（a）InP nanosphere，（b）InP nanopillar，（c）the simulated spectral reflectivities of different structures

Fig. 6. The processing flow of the self-assembled colloidal nanosphere masks：（a）-（f），（g）the enhanced spectral quantum efficiency of the visible-extended 320×256 InGaA FPA integrated with the artificial InP surface nanostructures

Fig. 7. （a）The scanning microscope image of the micro-mesa arrays for the 15-µm-pitch FPA，（b）a finished 3-inch FPA wafer，（c）measured temperature-dependent dark current versus reverse bias

Fig. 8. （a）Response range of a 1280×1024 InGaAs FPA，（b）the statistical distribution of the blackbody response signal

Fig. 9. The development roadmap of the monolithic polarized InGaAs FPA detectors in SITP

Fig. 10. An imaging comparison between the monolithic polarized 160×128 InGaAs SWIR FPA and a non-polarized FPA

Fig. 11. The measured reverse dark and light IV curves for the Geiger-mode InGaAsP/InP avalanche photodiode

Fig. 12. A 64×64 Geiger-mode InGaAsP/InP avalanche FPA assembly and an electronics module

Fig. 13. Timing histogram measurements for light waves with a deferred arrival time of 0.8 ns