Fig. 1. Schematic of the edge position of the sensor

Fig. 2. Sensor process flow chart

Fig. 3. Sensor edge simulation model

Fig. 4. Pixel and current collecting ring dark current

Fig. 5. Current density distribution diagram of equidistant guard ring structure （2 000 V bias）

Fig. 6. Surface potential distribution （2 000 V bias）

Fig. 7. Surface electric field intensity distribution （2 000 V bias）

Fig. 8. Al overhang of structure 2

Fig. 9. Current collecting ring and pixel leakage under different Al overhang structures

Fig. 10. Surface potential distribution under different Al overhang structures （2 000 V bias）

Fig. 11. Surface electric field distribution under different Al suspension structures （2 000 V bias）

Fig. 12. Leakage of current collecting ring under different number of guard rings

Fig. 13. Electric field distribution near the current collecting ring junction area （1 000 V bias）

Fig. 14. Surface potential distribution of different guard ring structures （1 000 V bias）

Fig. 15. The breakdown voltage of the current collecting ring changes with the number of guard rings

Fig. 16. Distribution of potential drop near the first guard ring （1 000 V bias）