Semiconductor Optoelectronics, Volume. 41, Issue 5, 676(2020)

Structural Design and Pressure Sensitivity of Graphene Pressure Sensors

WANG Dong, QIN Yafei*, YUAN Ruibo, and YANG Youpeng
Author Affiliations
  • [in Chinese]
  • show less

    Taking graphene as the sensitive material of the pressure sensor, Si as the base material, PN as the graphene protection material and Wheatstone bridge as the force-electric transformation measurement circuit, a new structure of silicon-based graphene pressure sensor was constructed. Based on the established theoretical model of the sensor with the foam experimental method, the relationship between the pressure of the sensor and the central change displacement was analyzed. And by combining with the ANSYS software static nonlinear analysis unit, the value analysis and finite element simulation were carried out to analyze the characteristics of deflection deformation of the graphene film. The results show that the theoretical analysis results of graphene film pressure and deflection deformation are consistent with the simulation ones.

    Tools

    Get Citation

    Copy Citation Text

    WANG Dong, QIN Yafei, YUAN Ruibo, YANG Youpeng. Structural Design and Pressure Sensitivity of Graphene Pressure Sensors[J]. Semiconductor Optoelectronics, 2020, 41(5): 676

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Jul. 1, 2020

    Accepted: --

    Published Online: Jan. 19, 2021

    The Author Email: Yafei QIN (qinyafei_kmust@foxmail.com)

    DOI:10.16818/j.issn1001-5868.2020.05.014

    Topics