Synthesis of Monolayer MoS2(1-x)Se2x Alloy and Photoelectric Properties of MoS2(1-x)Se2x (x=0. 25) Field-Effect Transistor

Peiru Zhang; Huan Liu; Jiaxing Hu; Lier Deng

doi:10.3788/AOS202242.1616001

Acta Optica Sinica, Volume. 42, Issue 16, 1616001(2022)

Synthesis of Monolayer MoS_2(1-_x₎Se₂_x Alloy and Photoelectric Properties of MoS_2(1-_x₎Se₂_x (x=0. 25) Field-Effect Transistor

Peiru Zhang, Huan Liu^*, Jiaxing Hu, and Lier Deng

Author Affiliations

School of Opto-Electronic Engineering, Xi'an Technological University, Xi'an 710021, Shaanxi , China

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Figures & Tables(12)

Fig. 1. Growth diagram of monolayer MoS_2(1-_x₎Se₂_x prepared by chemical vapor deposition

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Fig. 2. Morphology of monolayer MoS_2(1-_x₎Se₂_x alloy grown by different m_Se/m_S under optical microscope. (a) m_Se/m_S = 1/11; (b) m_Se/m_S = 1/5; (c) m_Se/m_S = 1/3; (d) m_Se/m_S = 1/2; (e) m_Se/m_S = 5/7; (f) m_Se/m_S = 1/1

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Fig. 3. AFM image at junction of monolayer MoS_2(1-_x₎Se₂_x and SiO₂/Si substrate

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Fig. 4. Relationship between size of monolayer MoS_2(1-_x₎Se₂_x and m_Se/m_S

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Fig. 5. SEM-EDS images of monolayer MoS_2(1-_x₎Se₂_x alloy with different components. (a) x=0.23; (b) x=0.24; (c) x=0.25; (d) x= 0.40; (e) x=0.41; (f) x=0.42

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Fig. 6. Relationship between x component value and m_Se/m_S in monolayer MoS_2(1-_x₎Se₂_x

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Fig. 7. Raman spectra and statistical analysis of Raman peak positions of monolayer MoS_2(1-_x₎Se₂_x alloy with different components. (a) Raman spectra; (b) statistical analysis of Raman peak positions

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Fig. 8. PL spectra, statistical analysis of peak positions and deviation diagram of band gap of monolayer MoS_2(1-x)Se_2x alloy with different components. (a) PL spectra of monolayer MoS_2(1-_x₎Se₂_x alloy with different components; (b) relationship between wavelength position of PL peak of each component alloy and component value x; (c) deviation diagram between band gap value converted by PL spectrum and band gap value calculated according to band gap relationship

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Fig. 9. Device structure and photoelectric test diagram of monolayer MoS_2(1-_x₎Se₂_x FET. (a) Structural diagram of device; (b) I-V curve of monolayer MoS_2(1-_x₎Se₂_x (x=0.25) device under darkness; (c) photoresponse current curves of monolayer MoS_2(1-_x₎Se₂_x (x= 0.25) device excited by 520, 780, 980 nm laser; (d) enlarged view of photoresponse current curves at arrow mark in Fig. 9(c)

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Table 1. Experimental detailed growth parameters
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Table 1. Experimental detailed growth parameters
Mass of MoO₃ /mg Mass of NaCl /mg Mass of Se /mg Mass of S /mg m_Se/m_S Temperature /℃
2 4 5 55 1/11 750
2 4 10 50 1/5 750
2 4 15 45 1/3 750
2 4 20 40 1/2 750
2 4 25 35 5/7 750
2 4 30 30 1/1 750

Table 2. Comparison of Raman characteristic peaks and PL emission peak positions of monolayer alloy with different components with literature results

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Table 2. Comparison of Raman characteristic peaks and PL emission peak positions of monolayer alloy with different components with literature results

x component value	$E_{2 g}^{1}$ （Mo－Se）/cm^－1	$E_{2 g}^{1}$ （Mo－S）/cm^－1	$A_{g}^{1}$ （Mo－S）/cm^－1	PL peak position /nm	Literature
0.23	271（272）	375（373）	400（399）	709（708）	［18］
0.24	272	375	399	716
0.25	272（270）	374（372）	399（401）	729	［19］
0.40	272	373	399	734
0.41	271（268）	372（374）	399（399）	737（735）	［24］
0.42	270（274）	371（376）	399（400）	739（731）	［28］

Table 3. Comparison between performance test results of FET prepared in this paper and test results in literatures

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Table 3. Comparison between performance test results of FET prepared in this paper and test results in literatures

FET	Mobility / （cm²·V^-1·s^-1）	Response range /nm	Responsity /（A·W^-1）	Detectivity / （cm·Hz^1/2·W^-1）	Response time /s	Literature
MoS_2（1-_x_）Se₂_x（x=0.15）	0.10					［14］
MoS_2（1-_x_）Se₂_x（x=0.25）	0.10					［15］
MoS_2（1-_x_）Se₂_x（x=0.25）		520-980	0.94	5.32×10¹⁰	0.008	This work
MoS_2（1-_x_）Se₂_x（x=0.30）	0.40					［14］
MoS_2（1-_x_）Se₂_x（x=0.31）	0.02					［15］
MoS_2（1-_x_）Se₂_x（x=0.43）	0.45					［16］
MoS_2（1-_x_）Se₂_x（x=0.65）	3.72					［17］
MoS_2（1-_x_）Se₂_x（x=0.74）	0.06					［18］

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Peiru Zhang, Huan Liu, Jiaxing Hu, Lier Deng. Synthesis of Monolayer MoS_2(1-_x₎Se₂_x Alloy and Photoelectric Properties of MoS_2(1-_x₎Se₂_x (x=0. 25) Field-Effect Transistor[J]. Acta Optica Sinica, 2022, 42(16): 1616001

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Paper Information

Category: Materials

Received: Feb. 9, 2022

Accepted: Mar. 8, 2022

Published Online: Aug. 4, 2022

The Author Email: Liu Huan (liuhuan@xatu.edu.cn)

DOI:10.3788/AOS202242.1616001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Experimental detailed growth parameters

Table 1. Experimental detailed growth parameters

Table 2. Comparison of Raman characteristic peaks and PL emission peak positions of monolayer alloy with different components with literature results

Table 2. Comparison of Raman characteristic peaks and PL emission peak positions of monolayer alloy with different components with literature results

Table 3. Comparison between performance test results of FET prepared in this paper and test results in literatures

Table 3. Comparison between performance test results of FET prepared in this paper and test results in literatures