Acta Optica Sinica, Volume. 42, Issue 16, 1616001(2022)
Synthesis of Monolayer MoS2(1-x)Se2x Alloy and Photoelectric Properties of MoS2(1-x)Se2x (x=0. 25) Field-Effect Transistor
Alloying/doping molybdenum disulfide (MoS2) is a new way of exploring the potential applications of two-dimensional materials in microelectronic devices. Chemical vapor deposition is applied, for which sodium chloride is used to assist growth. Moreover, the mass ratio of sulfur powder to selenium powder is adjusted, and six kinds of monolayer MoS2(1-x)Se2x alloys with different compositions are thereby obtained on SiO2/Si substrates. The photoluminescence peak position varied between 678 nm (~1.83 eV) and 813 nm (~1.53 eV). The transverse dimension of the continuously grown large-area monolayer MoS2(1-x)Se2x (x=0.25) alloys can reach 200 μm. For the investigation of the photoelectric properties of MoS2(1-x)Se2xalloys, a large-area monolayer MoS2(1-x)Se2x (x=0.25) alloy is used to prepare field-effect transistors. The photoelectric test results show that the response of the monolayer MoS2(1-x)Se2x(x=0.25) field-effect transistor irradiated by the 520 nm laser reaches 940 mA·W-1, with a detection rate of 5.32×1010 cm·Hz1/2·W-1 and a fast response time of 8 ms.
Get Citation
Copy Citation Text
Peiru Zhang, Huan Liu, Jiaxing Hu, Lier Deng. Synthesis of Monolayer MoS2(1-x)Se2x Alloy and Photoelectric Properties of MoS2(1-x)Se2x (x=0. 25) Field-Effect Transistor[J]. Acta Optica Sinica, 2022, 42(16): 1616001
Category: Materials
Received: Feb. 9, 2022
Accepted: Mar. 8, 2022
Published Online: Aug. 4, 2022
The Author Email: Liu Huan (liuhuan@xatu.edu.cn)